Abstract
In 1969, research on quantum structures was initiated with a proposal of an “engineered” semiconductor superlattice by Esaki and Tsu (1) (2). In anticipation of advancement in epitaxy, we envisioned two types of superlattices with alternating ultrathin layers: doping and compositional, as shown at the top and bottom of Figure 1, respectively.
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References
L. Esaki and R. Tsu, “Superlattice and negative conductivity in semiconductors,” IBM Research Note RC-2418 (1969).
L. Esaki and R.Tsu, “uperlattice and negative differential conductivity in semiconductors,” IBM J. Res. Develop. 14: 61 (1970).
D. Bohm,“ Theory:” (Prentice Hall, Englewood Cliffs, N.J. 1951 ), p. 283.
L. Esaki,“ journey into tunneling,” Les Prix Nobel en 1973, Imprimerie Royale, P.A. Norstedt S Soner, Stockholm 1974, p. 66.
L. Esaki, L.L. Chang, and R. Tsu, “A one-dimensional ‘superlattice’ in semiconductors” Proceedings of the 12th International Conference on Low Temperature Physics, Kyoto, Japan, 1970 (Keigaku Publishing Co.,Tokyo, Japan), p. 551.
A.E. Blakeslee and C.F. Aliotta, “Man-made superlattice crystals,” IBM J. Res. Develop. 14: 686 (1970).
L. Esaki, L.L. Chang, W.E. Howard, and V.L. Rideout, “Transport properties of a GaAs-GaAlAs superlattice,” Proceedings of the 11th International Conference on the Physics of Semiconductors, Warsaw, Poland, 1972, edited by the Polish Academy of Sciences (PWN-Polish Scientific Publishers, Warsaw, Poland ), p. 431.
R. Tsu and L. Esaki, “Nonlinear optical response of conduction electrons in a superlattice” Appl. Phys. Lett. 19: 246 (1971).
L. Esaki, “Semiconductor Superlattices and Quantum Wells” Proceedings of the 17th International Conference on the Physics of Semiconductors, San Francisco, August, 1984, edited by J.D. Chadi and W.A. Harrison (Springer-Verlag, New York, 1985), p.473; IEEE J. Quantum Electron., QE-22: 1611 (1986).
A. C. Gossard, “Growth of Microstructures by Molecular Beam Epitaxy” IEEE J. Quantum Electron., QE-22: 1649 (1986)
R. Tsu and L. Esaki, “Tunneling in a finite superlattice,” Appl. Phys. Lett. 22: 562 (1973).
L.L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semi-conductor double barriers” Appl. Phys. Lett. 24: 593 (1974).
L. Esaki and L.L. Chang, “New transport phenomenon in a semi-conductor ‘superlattice’” Phys. Rev. Lett. 33: 495 (1974).
F. Capasso, K. Mohammed and A. Y. Cho, “Resonant tunneling through double barriers” IEEE J. Quantum Electron., QE-22: 1853 (1986).
E.E. Mendez, W.I. Wang, B. Ricco, and L. Esaki, “Resonant Tunneling of holes in AlAS-GaAs-AlAS heterostructures” Appl. Phys. Lett. 47: 415 (1985).
R. Dingle, A.C. Gossard, and W. Wiegmann, “Direct observation of superlattice formation in a semiconductor heterostructure” Phys Rev. Lett. 34: 1327 (1975).
J.P. van der Ziel, R. Dingle, R.C. Miller,W. Wiegmann, and W.A. Nordland Jr., “Laser oscillation from quantum states in very thin GaAs - Al0 2Gao es multilayer structures” Appl. Phys. Lett. 26: 463 (1975).
Y. Arakawa and A. Yariv, “Quantum well lasers” IEEE J. Quantum Electron., QE-22: 1887 (1986)
R. Tsu, L.L. Chang, G.A. Sai-Halasz, and L. Esaki, “Effects of quantum states on the photocurrent in a superlattice” Phys. Rev. Lett. 34: 1509 (1975).
B. Deveaud, J. Shah, T. C. Damen, B. Lambert and A. Regreny, “Bloch transport of electrons and holes in superlattice mini- bands: direct measurement by subpicosecond luminescence spectroscopy” Phys. Rev. Lett. 58: 2582 (1987).
E.E. Mendez, G Bastard, L.L. Chang, and L. Esaki, “Effect of an electric field on the luminescence of GaAs quantum wells” Phys. Rev. B 26: 7101 (1982).
L. Vina, R. T. Collins, E. E. Mendez and W. I. Wang, “Excitonic coupling in GaAs/GaAlAs quantum wells in an electric field” Phys. Rev. Lett. 58: 832 (1987).
D.S. Chemla, T.C. Damen, D.A.B. Miller, A.C. Gossard, and W. Wiegmann, “Electroabsorption by Stark effect on room-temperature excitons in GaAs/GaAlAs multiple quantum well structures,” Appl. Phys. Lett. 42: 864 (1983).
D.A.B. Miller, J.S. Weiner, and D.S. Chemla, “Electricfield dependence of linear optical properties in quantum well structures” IEEE J. Quantum Electron., QE-22: 1816 (1987).
P. Manuel, G.A. Sai-Halasz, L.L. Chang, Chin-An Chang, and L. Esaki, “Resonant Raman scattering in a semiconductor superlattice,” Phys. Rev. Lett. 37: 1701 (1976).
G. Abstreiter, R. Merlin, and A. Pinczuk, “Inelastic light scattering by electronic excitations in semiconductor heterostructures” IEEE J. Quantum Electron., QE-22: 1771 (1987).
C. Colvard, R. Merlin, and M.V. Klein, and A.C. Gossard, “Observation of folded acoustic phonons in a semiconductor superlattice,” Phys. Rev. Lett. 45: 298 (1980).
M.V. Klein, “Phonons in semiconductor superlattices” IEEE J. Quantum Electron., QE-22: 1760 (1987)
R. Dingle, H.L. Stormer, A.C. Gossard, W. Wiegmann, “Electron mobilities in modulation-doped semiconductor heterojunction superlattices,” Appl. Phys. Lett. 33: 665 (1978).
M. Abe, T. Mimura, K. Nishiuchi, A. Shibatomi and M. Kobayashi, “Recent advances in ultra-high-speed HEMT technology” IEEE J. Quantum Electron., QE-22: 1870 (1986)
L. L. Chang, H. Sakaki, C. A. Chang, and L. Esaki, “Shubnikov-de Haas oscillations in a semiconductor superlattice” Phys. Rev. Lett. 38: 1489 (1977).
K. von Klitzing, G. Doreda, and M. Pepper, “New method for high- accuracy determination of the fine-structure constant based on quantized hall resistance,” Phys. Rev. Lett. 45: 494 (1980).
D.C. Tsui and A.C. Gossard, “Resistance standard using quantization of the Hall resistance of GaAs - AlxGa-1-xAs heterostructures Appl. Phys. Lett. 38: 550 (1981).
G.A. Sai-Halasz, R. Tsu,and L.Esaki, “A new semiconductor superlattice,” App. Phys. Lett. 30: 651 (1977); G.A. Sai-Halasz, L. Esaki, and W.A. Harrison, ”InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition,” Phys. Rev. B 18: 2812 (1978).
L.L. Chang, N.J. Kawai, Q.A. Sai-Halasz, R. Ludeke, and L. Esaki, “Observation of semiconductor-semimetal transition in InAs-GaSb superlattices” Appl. Phys. Lett. 35: 939, (1979).
Y. Guldner, J.P. Vieren, P. Voisin, M. Voos, L.L. Chang, and L. Esaki, “Cyclotron resonance and far-infrared magneto-absorption experiments on semimetallic InAs-GaSb superlattices,” Phys. Rev. Lett. 45: 1719, (1980).
G. Bastard, E.E. Mendez, L.L. Chang, L. Esaki, “Self-consistent calculations in InAs-GaSb heterojunctions,” J. Vac. Sci. Technol. 21: 531 (1982).
H. Munekata, E.E. Mendez, Y. Iye, and L. Esaki, “Densities and mobilities of coexisting electrons and holes in MBE grown GaSb-InAs-GaSb quantum well,” Surf. Sci. 174: 449 (1986)
E.E. Mendez, L. Esaki, and L.L. Chang, “Quantum Hall effect in a two-dimensional electron hole gas,”Phys. Rev. Lett. 55: 2216 (1985).
T. P. Smith and H. Munekata, private communication.
G.H. Dohler, H. Kunzel, D. Olego, K. Ploog, P. Ruden, H.J. Stolz, and G. Abstreiter, “Observation of tunable band gap and two- dimensional subbands in a novel GaAs superlattice,” Phys. Rev. Lett. 47: 864 (1981).
J.H. van der Merwe, “Crystal interfaces,” J. Appl. Phys. 34: 117 (1963).
G.C. Osbourn, R.M. Biefeld and P.L. Gourley, “A GaAsxP1-x/GaP strained-layer superlattice,” Appl. Phys. Lett. 41: 172 (1982).
E. Kasper, H. J. Herzog and H. Kibbel, “A one-dimensional SiGe superlattice grown by UHV epitaxy,” Appl. Phys. 8: 199 (1975).
H. M. Manasevit, I. S. Gergis, and A. B. Jones, “Electron mobility enhancement in epitaxial multilayer Si - Si-1-x Gex alloy films on (100) Si,” Appl. Phys. Lett. 41: 464 (1982).
J.C. Bean, L.C. Feldman, A.T. Fiory, S. Nakahara, and J.D. Robinson, “GexSi-1-x/Si strained-layer superlattice grown by molecular beam epitaxy,” J. Vac. Sci. Technol. A2, 436 (1984).
A.V. Nurmikko, R.L. Gunshor and L.A. Kolodziejski, “Optical Properties of CdTe/CdMnTe multiple quantum wells” IEEE J. Quantum Electron. QE-22: 1785 (1986)
A.C. Gossard, P.M. Petroff, W. Weigmann, R. Dingle, and S. Savage, “Epitaxial structures with alternate-atomic-layer composition modulation,” Appl. Phys. Lett. 29: 323 (1976).
H. Temkin, G.J. Dolan, M.B. Parish, and S.N.G. Chu, “Low-temperature photoluminescence from InGaAs/InP quantum wires and boxes” Appl. Phys. Lett. 50: 413 (1987).
H. Sakaki, “Scattering suppression and high-mobility effect of size- quantized electrons in ultrafine semiconductor wire structures” Jpn. J. Appl. Phys. 19: L735 (1980).
Y-C Chang, L. L. Chang and L. Esaki, “A new one-dimensional quantum well structure” Appl. Phys. Lett. 47: 1324 (1985).
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Esaki, L. (1987). A Perspective in Quantum-Structure Development. In: Mendez, E.E., von Klitzing, K. (eds) Physics and Applications of Quantum Wells and Superlattices. NATO ASI Series, vol 170. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-5478-9_1
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DOI: https://doi.org/10.1007/978-1-4684-5478-9_1
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