Abstract
It is now over 15 years ago that the first gallium arsenide field effect transistors were fabricated. Since then major programs worldwide have enabled the device to be developed into a commercial production item opening up many new applications areas both in low-noise receivers and in transmitting circuitry.
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© 1984 Plenum Press, New York
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Turner, J.A. (1984). Metal-Semiconductor Field Effect Transistors. In: Sharma, B.L. (eds) Metal-Semiconductor Schottky Barrier Junctions and Their Applications. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-4655-5_7
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DOI: https://doi.org/10.1007/978-1-4684-4655-5_7
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