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Physics of Schottky Barrier Junctions

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Metal-Semiconductor Schottky Barrier Junctions and Their Applications

Abstract

A rectifying metal-semiconductor contact is known as a Schottky barrier after W. Schottky, who first proposed a model for barrier formation. Our knowledge of metal-semiconductor diodes is more than a century old. F. Braun,(1) in 1874, reported the rectifying nature of metallic contacts on copper, iron, and lead sulfide crystals. Although numerous experimental and theoretical studies have been carried out since then, our understanding of the metalsemiconductor junctions is still far from complete. This is perhaps due to the fact that their performance is highly process dependent.

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  1. Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India

    M. S. Tyagi

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  1. Solid State Physics Laboratory, Delhi, India

    B. L. Sharma

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Tyagi, M.S. (1984). Physics of Schottky Barrier Junctions. In: Sharma, B.L. (eds) Metal-Semiconductor Schottky Barrier Junctions and Their Applications. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-4655-5_1

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