Abstract
Conventional isothermal heat treatment techniques have served for semiconductor fabrication very well up until now. Most of the physical processes involved in fabrication are rate-determined by a solid state diffusion process (e.g. oxidation, dopant redistribution, anneal of implantation damage) and such processes have activation energies typically in the range 2–5 eV. The resulting sensitivity to temperature has required temperature control to ±1°C on modern semiconductor furnaces, and this is routinely met. What, then, is the place of radiant beam processing? This technique opens up the possibility of non-isothermal heat treatment, in which we have control over the spatial and temporal extent of the temperature profile inside the silicon over a very wide range of times (100 picosecs to 100 sees) and distances (0.1 micron to 1000 microns). This selectivity and control of beam annealing makes completely new types of processing possible, and the purpose of this paper is to examine these new possibilities in the light of their usefulness for device fabrication and particularly for silicon integrated circuit processing. New developments are occurring monthly, however, and this overview can only hope to be an accurate snapshot of a rapidly moving field of work.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
A. Gat, J.F. Gibbons, T.J. Magee, J. Peng, V.R. Deline, P. Williams and C.A. Evans Jr., Appl. Phys. Letts. 3_2 (1978) 276–278
. A. Gat, J.F. Gibbons, T.J. Magee, J. Peng, V.R. Deline, P. Williams and C.A. Evans Jr.,Appl. Phys. Letts. 33 (1978) 389–391.
J.L. Regolini, J.F. Gibbons, T.W. Sigmon, R.F.W. Pease, T.J. Magee and J. Peng, Appl. Phys. Letts. 34 (1979) 410–413.
K.N. Ratnakumar, R.F.W. Pease, D.J. Bartelink, N.M. Johnson and J.D. Meindl, Appl. Phys. Letts. 35 (1979) 463–466.
H. Boroffka, E.F. Krimmel, M. Linder and H. Runge, Proceedings of the Symposium on Laser and Electron Beam Processing of Electronic Materials, Electrochem. Soc. Proc., Vol 80–1 (1980) 178–186.
G. Zimmer, Electronics Letts. (1979) 15 No.6, 184–186.
R.A. McMahon and H. Ahmed in Ref.4, p.123-140.
J.F. Gibbons in Ref.4, p.1-25.
By kind permission of R.A. McMahon and H. Ahmed.
T. Shibata, T.W. Sigmon and J.F. Gibbons in Ref.4, p.520-530.
T.W. Sigmon, J.L. Regolini, J.F. Gibbons in Ref .4, p.531-536.
C.W. White, W.H. Christie, R.E. Eby, J.C. Wang, R.T. Young, G.J. Clark and R.F. Wood, to be published.
See Ref.36.
A.G. Cullis, H.C. Webber, J.M. Poate and N.G. Chew, J.Microsc. 118 (1980).
M. Wittmer and M. von Allmen, J. Appl. Phys. 50 4786 (1979).
J.M. Poate, H.J. Leamy, T.T. Sheng and G.K. Celler, Appl. Phys. Letts. 33 918 (1978) .
Proceedings of the Laser Solids Interactions and Laser Processing Symposium Ed. S.D. Ferris, H.J. Leamy, J.M. Poate, A.I.P. Conf. Proceedings No.50 (1979).
C.W. White, S.R. Wilson, B.R. Appleton, F.W. Young Jr., J.Appl. Phys. 51 (1980), 738–749.
J. Narayan, R.T. Young, C.W. White, J. Appl. Phys. 49_ (1978), 3912–3917.
M. Linder, Phys .Stat.Sol. (a) 5l (1980) 263.
M. Koyanagi, H. Tamura, M. Miyao, N. Hashimoto and T. Tokuyama, Appl. Phys. Letts. 35 (1979) 621–623.
J. Narayan, R.T. Young, R.F. Wood, W.H. Christie, Appl. Phys. Letts. 33 (1978) 338–340.
K.L. Wang, Y.S. Liu and C. Burman, Appl. Phys. Letts. 35 (1979) 263–265.
R. Stuck, E. Fogarassy, A. Grob, J.J. Grob, J.C. Muller and P. Siffert in Ref.4, pp.193-203.
C. Hill in Ref.4, p.26-43.
J.C. Bean, H.J. Leamy, J.M. Poate, G.A. Rozgonyi, J.P. van der Ziel, J.S. Williams and G.K. Celler, J. Appl. Phys. 50 (1979) 881.
P. Revesz, G. Farkas, G. Mezey and J. Gyulai, Appl. Phys. Letts. 33 (1978) 431–433.
D. Hoonhout, C.B. Kerkdigk, F.W. Saris, Phys. Lett. A66 (1978) 145.
G.A. Sai-Halasz, F.F. Fang, T.O. Sedgwick Armin Segmuller,Appl. Phys Letts., 36 (1980) 419–422.
M.E. Roulet, P. Schwob, K. Affolter, W. Lüthy, M. von Allmen, M. Fallavier, J.M. Mackowski, M.A. Nicolet and J.P, Thomas, J. Appl. Phys. 50 (1979) 5536–5538.
P. Shah, R. Shah, L. Crosthwait in Ref.4, 227–234.
K.F. Lee, J.F. Gibbons, K. Saraswat, T.I. Kamins, Appl. Phys. Letts. 35 (1979) 173–175.
J.F. Gibbons, K.F. Lee, T.J. Magee, J. Peng and R. Ormond, Appl. Phys. Letts. 34. (1979) 831.
M.W. Geis, D.C. Flanders, H.I. Smith, Appl. Phys. Letts. 35 (1979) 71.
G. Yaron and La Verne D. Hess, Appl. Phys. Letts. 36. (1980) 220–222.
F.E. Harper and M.I. Cohen, Sol. State Elec. JL3 (1980) 1103.
C.W. White, J. Narajan and R.T. Young, Science 204 (1979) 461–468.
G. Yaron, L.D. Hess and S.A. Kokorowski, IEDM (1979) Abs.9.4.
C.P. Wu and G.L. Schnable, RCA Review 40 (1979) 339–344.
H. Runge, private communication.
Y. Hayafuji, T. Yanada and Y. Aoki, Elec. Chem. Soc. Meeting (Fall 1979), Abs.485 Abstracts Vol.79–2.
R.A. Kaplan, M.G. Cohen, K.C. Liu, Ref.4, 58–82.
A.G. Cullis, H.C. Webber and P. Bailey, J. Phys. E. 12: (1979) 688–689.
A. Lietoila, J.F. Gibbons, T.J. Magee, J. Peng and J.D. Hong, Appl. Phys. Letts. 35 (1979) 532–534.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1983 Plenum Press, New York
About this chapter
Cite this chapter
Hill, C. (1983). Laser Annealing of Semiconductor Devices. In: Bertolotti, M. (eds) Physical Processes in Laser-Materials Interactions. NATO Advanced Study Institutes Series, vol 84. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-4322-6_8
Download citation
DOI: https://doi.org/10.1007/978-1-4684-4322-6_8
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-4324-0
Online ISBN: 978-1-4684-4322-6
eBook Packages: Springer Book Archive