Abstract
Laser calorimetry has been used to study intensity dependent absorption process in semiconductors at 1.06 and 1.318 µm. New measurements of two photon absorption and two photon excited free carriers are reported. Saturation of the one photon absorption has been observed and evidence is presented for a pulse width dependence of the two photon absorption.
Keywords
- Internal Reflection
- Photon Absorption
- Free Carrier Absorption
- High Order Process
- Linear Absorption Coefficient
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
A version of this paper appears in the December 15, 1980 issue of Applied Physics Letters.
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References
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© 1983 Plenum Press, New York
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Stewart, A.F., Bass, M. (1983). Intensity Dependent Absorption in Semiconductors. In: Bertolotti, M. (eds) Physical Processes in Laser-Materials Interactions. NATO Advanced Study Institutes Series, vol 84. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-4322-6_17
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DOI: https://doi.org/10.1007/978-1-4684-4322-6_17
Publisher Name: Springer, Boston, MA
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