Abstract
Flexural strength of four different grades of dense silicon carbide was measured at different temperatures. It could be demonstrated by scanning electron microscopy that strength remains constand up to high temperatures, if the fracture mechanism turns out to be transgranular. In the case of intergranular fracture the decrease of strength with temperature is governed by subcritical crack growth.
Static fracture toughness vs. temperature characteristics have also been determined. The static fracture toughness data at high temperatures are assumed to be dependent upon subcritical crack growth in the case of intergranular fracture mechanism.
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References
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© 1983 Plenum Press, New York
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Kriegesmann, J., Lipp, A., Reinmuth, K., Schwetz, K.A. (1983). Strength and Fracture Toughness of Silicon Carbide. In: Lenoe, E.M., Katz, R.N., Burke, J.J. (eds) Ceramics for High-Performance Applications III. Army Materials Technology Conference Series, vol 1. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3965-6_36
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DOI: https://doi.org/10.1007/978-1-4684-3965-6_36
Publisher Name: Springer, Boston, MA
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