Abstract
SiO2/Si samples prepared in 2% and 4% hcl/O2 mixtures at 1200°C have been annealed in H2O/N2 ambients at 1200°C. The anneals ranged up to 16 hrs in ambients with 4 or 40 ppm H2O in N2. Rutherford backscattering measurements have been made to determine the amount and location of C1 incorporated in these samples. A linear loss of C1 with annealing time is found for all samples. Changes in the distribution of C1 near the SiO2/Si interface are found. These changes are interpreted in terms of morphological changes in the third (Cl containing)phase. A significant effect of the H2O content of the N2 ambient is observed.
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References
M. Monkowski, et al., previous paper at this conference.
J. Monkowski has reviewed the literature in Solid State Technology, 22, #7, 58 and #8, 113 (1979).
J. Monkowski, R. E. Tressler, and J. Stach, J. Electrochem. Soc, 125, 1867 (1978).
A. Rohatgi, S. R. Butler, F. J. Feigl, H. W. Kraner, and K. W. Jones, J. Electrochem. Soc, 126, 143 (1979).
B. E. Deal, A. Hurrle, and M. J. Schulz, J. Electrochem. Soc., 125, 2024 (1978).
Y. J. Van der Meulen, C. M. Osburn, and J. F. Ziegler, J. Electrochem. Soc., 122, 284 (1975).
R. J. Kriegler, Thin Solid Films, 13, 11 (1974).
S. A. Barker, M. E. Butler, S. R. Butler, F. J. Feigl, H. W. Kraner, and K. W. Jones, Extended Abstract #213, 78-2, The Electrochem. Soc, Pittsburgh, PA, meeting, Fall 1978, p. 572.
W. K. Chu, J. W. Moyer, and M. A. Nicolet, Backscattering Spectrometry, Academic, New York (1978).
C. Mack, Essentials of Statistics for Scientists and Technologists, Plenum Press, London, 1966.
F. L. McCrackin, NBS Tech. Note #479 (1969).
J. Monkowski, J. Stach, and R. E. Tressler, in Semiconductor Silicon 1977, H. R. Huff and E. Sirtl, editors, the Electrochem. Soc, Princeton, NJ, p. 324 (1977).
H. A. Schaeffer, J. Am. Cer. Soc. 62, 343 (1979).
H. A. Schaeffer, in a private communication, gives this value of D at 950°C; however, he points out that some devitrification of the silica samples was observed.
R. Bruckner, J. Noncrystall. Solids, 5, 123 (1970).
R. H. Doremus, Glass Science, J. Wiley, New York, 1973, p. 121
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© 1981 Plenum Press, New York
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Butler, S.R., Feigl, F.J., Titcomb, S.L., Tsai, H., Jones, K.H., Kraner, H.W. (1981). Stability Studies of the Chlorine Containing Phase at the SiO2/Si Interface Produced by HCl/O2 Oxidation of Silicon. In: Pask, J., Evans, A. (eds) Surfaces and Interfaces in Ceramic and Ceramic — Metal Systems. Materials Science Research, vol 14. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3947-2_32
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DOI: https://doi.org/10.1007/978-1-4684-3947-2_32
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