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Surfaces and Interfaces in Ceramic and Ceramic — Metal Systems pp 335–351Cite as

The Si-SiO2 Interface: Current Understanding of Chemical and Electronic Defects

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Part of the book series: Materials Science Research ((MSR,volume 14))

Abstract

The silicon-silicon dioxide solid state interface system has been extensively investigated over the past twenty years, primarily due to its vital importance in integrated circuit technology. Many of the studies performed have dealt with electrical characterization, with the result that electronic properties can be accurately and reproducibly controlled by process sequences. Still, most of these procedures are largely empirical, because little detailed chemical knowledge of the electronic defects is available. This paper reviews some of the relationships between electronic defects and the processing procedures utilized for integrated circuit fabrication. Ongoing theoretical and experimental research that suggests specific chemical origins for these defects is discussed. Possible common origins for certain of the charge centers are indicated.

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Author information

Authors and Affiliations

  1. Material and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California, 94720, USA

    Dennis W. Hess

  2. Department of Chemical Engineering, University of California, Berkeley, California, 94720, USA

    Dennis W. Hess

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  1. Dennis W. Hess
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Editors and Affiliations

  1. The Lawrence Berkeley Laboratory, University of California, Berkeley, California, USA

    Joseph Pask  & Anthony Evans  & 

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© 1981 Plenum Press, New York

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Hess, D.W. (1981). The Si-SiO2 Interface: Current Understanding of Chemical and Electronic Defects. In: Pask, J., Evans, A. (eds) Surfaces and Interfaces in Ceramic and Ceramic — Metal Systems. Materials Science Research, vol 14. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3947-2_29

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  • DOI: https://doi.org/10.1007/978-1-4684-3947-2_29

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-3949-6

  • Online ISBN: 978-1-4684-3947-2

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