Abstract
The presence of impurities in heavily doped semiconductors changes positions and shapes of the conduction and valence bands of the host. From experiments it is known that the value of the band gap is reduced as compared to that of the pure material. We present a calculation of this reduction in n-type Si. In the calculations we take into account the effects of electron-electron and electron-donor ion interaction on the energies of the valence and conduction band states within a dynamical RPA treatment.
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© 1981 Springer Science+Business Media New York
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Sernelius, B.E., Berggren, K.F. (1981). On the Band Gap Narrowing in Impure Silicon: Effects of Impurity Scattering. In: Devreese, J.T., Lemmens, L.F., van Doren, V.E., van Royen, J. (eds) Recent Developments in Condensed Matter Physics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3902-1_25
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DOI: https://doi.org/10.1007/978-1-4684-3902-1_25
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-3904-5
Online ISBN: 978-1-4684-3902-1
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