Skip to main content
SpringerLink
Log in
Book cover

Recent Developments in Condensed Matter Physics pp 239–245Cite as

The Electronic Structure of Silicon Nitride

  • Chapter

Abstract

Silicon Nitride is found to have a valence band maximum of nitrogen lone pair p electrons because of the planar nitrogen site. This contrasts with the usual lone pair semiconductors, such as SiO2, caused by a p4 valence configuration. Consequently although the valence band density of electron states shows a lone pair band and a deeper bonding band as usual, impurities have a greater effect in the nitride than in conventional lone pair semiconductors. Hole transport is also discussed.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. J.J. Chang, Trans.IEEE ED-24, 511 (1977).

    Article  Google Scholar 

  2. P.C. Arnett, Z.A. Weinberg, Trans. IEEE ED-25, 1014 (1978).

    Article  ADS  Google Scholar 

  3. Z.A. Weinberg, R.A. Pollak, Appl. Phys. Letts. 27, 254 (1975).

    Article  ADS  Google Scholar 

  4. R.W.G. Wyckoff, Crystal Structures, Vol.2, p.159, Wiley, N.Y., (1964).

    Google Scholar 

  5. R. Marchand, Y. Laurent, J. Lang, Act. Cryst. B25, 2157 (1969).

    Google Scholar 

  6. S.T. Pantelides, W.A. Harrison, Phys.Rev. B 13, 2667 (1976).

    Article  ADS  Google Scholar 

  7. J. Robertson, J. Phys. C 12, 4753 (1979).

    Article  ADS  Google Scholar 

  8. R.B. Laughlin, J.D. Joannopoulos, D.J. Chadi, Phys.Rev. B 20, 5228 (1979).

    Article  ADS  Google Scholar 

  9. F.R. McFeely, S.P. Kowalcyzk, L. Ley, R.G. Cavell, R.A. Pollak, D.A. Shirley, Phys. Rev. B 9, 5268 (1974).

    Article  ADS  Google Scholar 

  10. H.R. Philipp, J. Electrochem. Soc. JL 20, 296 (1973).

    Google Scholar 

  11. D.J. DiMaria, P.C. Arnett, Appl. Phys. Letts. 26, 711 (1975).

    Article  ADS  Google Scholar 

  12. M.V. Coleman, D.J.D. Thomas, Phys.Stat.Solidi. 25, 241 (1968).

    Article  ADS  Google Scholar 

  13. J. Stohr, L. Johansson, I. Lindau, P. Pianetta, Phys.Rev. B 20, 644 (1979).

    Article  ADS  Google Scholar 

  14. F. Galeener concludes that the nitrogen site in a-Si3N4 is planar from scattering experiments; quoted by G. Lucovsky, J. Non Cryst. Solids 35, 825 (1980).

    Article  ADS  Google Scholar 

  15. H.J. Stein, J. Electronic Mats., 5, 161 (1976).

    Article  ADS  Google Scholar 

  16. H.J. Stein, S.T. Picraux, P.H. Holloway, Trans. IEEE ED-25, 1008 (1978).

    Article  Google Scholar 

  17. J. Robertson, Phil. Mag., to be published. This paper also discusses the defect model of C.T. Kirk, J. Appl. Phys. 50, 4190 (1979).

    Article  ADS  Google Scholar 

  18. R.C. Hughes, Phys. Rev. Letts. 30, 1333 (1973).

    Article  ADS  Google Scholar 

  19. N.F. Mott, Adv. Phys. 26, 363 (1977).

    Article  ADS  Google Scholar 

  20. M. Kastner, Phys. Rev. Letts. 28, 355 (1972).

    Article  ADS  Google Scholar 

  21. N.F. Mott, E.A. Davis, R.A. Sreet, Phil.Mag. 32, 961 (1975).

    Article  ADS  Google Scholar 

  22. G. Lucovsky, Phil.Mag. B 39, 531 (1979).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Central Electricity Research Laboratories, Leatherhead, Surrey, KT22 7SE, UK

    J. Robertson

Authors
  1. J. Robertson
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. University of Antwerpen (RUCA and UIA), Belgium

    J. T. Devreese (Chairman of the Conference, Professor of Theoretical Physics) (Chairman of the Conference, Professor of Theoretical Physics)

  2. University of Antwerpen (RUCA), Belgium

    L. F. Lemmens  & V. E. Van Doren  & 

  3. University of Antwerpen (UIA), Belgium

    J. Van Royen

Rights and permissions

Reprints and permissions

Copyright information

© 1981 Plenum Press, New York

About this chapter

Cite this chapter

Robertson, J. (1981). The Electronic Structure of Silicon Nitride. In: Devreese, J.T., Lemmens, L.F., Van Doren, V.E., Van Royen, J. (eds) Recent Developments in Condensed Matter Physics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3899-4_31

Download citation

  • DOI: https://doi.org/10.1007/978-1-4684-3899-4_31

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-3901-4

  • Online ISBN: 978-1-4684-3899-4

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation