Charge State Dependence of Si K X-Ray Production in Solid and Gaseous Targets by 40 MeV Oxygen Ion Impact

Abstract

We have studied the yield of silicon K x rays induced by 2 1/2 MeV/amu oxygen ions in gaseous (SiH₄) and amorphous solid targets. For a gas density 7.4 x 10¹⁴ cm^-2 the yield increases approximately exponentially with the charge state q of the projectile in the region q = 6, 7, 8. A similar, but smaller, trend is found for a 7 μg/cm² solid target. At this beam energy the most probable oxygen charge state emerging from a solid Si target is 0⁷⁺. The x-ray yield from the solid is in accord with the emergent charge state.

Research sponsored jointly by Office of Naval Research, NASA, and the U. S. Atomic Energy Commission under contract with Union Carbide Corporation.