Abstract
The diffusion equation was applied to obtain the dechanneling caused by lattice defects in Si. It is shown that the predominant effect of defects on dechanneling for large surface concentration or large depth is the modification of the particle distribution in transverse energy and enhancement of dechanneling by lattice vibrations and electronic collisions. It is pointed out that this effect modifies considerably the depth profile of lattice defects extracted from back-scattering experiments.
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© 1975 Springer Science+Business Media New York
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Matsunami, N., Itoh, N. (1975). Effects of Lattice Defects on Dechanneling and on Channeled-Particle Distribution. In: Datz, S., Appleton, B.R., Moak, C.D. (eds) Atomic Collisions in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3117-9_16
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DOI: https://doi.org/10.1007/978-1-4684-3117-9_16
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-3119-3
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