Abstract
Rutherford backscattering channeling experiments analysed in the framework of single scattering theory, taking into account the effects of flux peaking, lattice location of defects (through de-channeling cross section), and number of scattering centres per defect, indicate defect introduction rates for 300 keV H+ and 275 keV He+ in the ratio 1 to 2 which is similar to the electronic stopping power ratio but differs considerably from Kinchin and Pease predictions (ratio 1 to 20). A multiple ionization damage process is proposed.
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Pabst, H.J., Palmer, D.W. (1975). Indication for an Ionization Damage Process in Light Ion Irradiation Damage in Silicon. In: Datz, S., Appleton, B.R., Moak, C.D. (eds) Atomic Collisions in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-3117-9_14
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DOI: https://doi.org/10.1007/978-1-4684-3117-9_14
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