Abstract
T c studies in the binary Nb—Ga system1,2 as a function of preparative methods and heat treatments have helped to clarify the conditions under which the maximum \({{T}_{c}}\simeq {{20}^{\circ }}K\) can be obtained in this system. The addition of small amounts of a third element in binary A15 compounds has always been of interest from both the point of view of T c enhancement and to control grain growth and thus enhance J c . If increased J c is the goal, it is always desirable to not depress T c simultaneously. Using techniques previously proven to be appropriate, we have continued our studies of Nb1-xGax and have also investigated Nb0.70-y M y Ga0.30 materials where M is Mo, Ta, Ti, or Zr.
Supported in part by AFOSR Contract F44620-71-C-0045.
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Deis, D.W., Hulm, J.K. (1974). T c Studies of Nb—Ga Binary and Ternary Compounds. In: Timmerhaus, K.D., O’Sullivan, W.J., Hammel, E.F. (eds) Low Temperature Physics-LT 13. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2688-5_92
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DOI: https://doi.org/10.1007/978-1-4684-2688-5_92
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