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Ion Implantation of as in CdTe: Electrical Characteristics and Radiation Damage

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Ion Implantation in Semiconductors

Abstract

The effects of arsenic and krypton implantations have been investigated in semi-insulating cadmium telluride crystals. Nearly 100 percent electrical activity was observed when As implants were performed at 300°C in samples subjected to a 24-hour 500°C cadmium vapor anneal prior to implantation. A jet thinning technique was utilized to prepare samples for transmission electron microscopy analysis and a number of micrographs obtained. In2Te3 and CdCl2 precipitates were identified in indium and chlorine compensated materials. Implantation damage was also observed in the form of small vacancy loops.

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References

  1. T. J. Magee, J. Peng, and J. C. Bean, “Preparation of Thin Cadmium Telluride Samples for Electron Microscope Studies,” Proc. Electron Microscopy Soc. Amer., Claitor Publ. Co., Baton Rouge, La. (1974).

    Google Scholar 

  2. D. de Nobel, Phillips Res. Rpt. 14, 442 (1959).

    Google Scholar 

  3. S. Amelinckx, Direct Observation of Dislocations, p. 414, Academic Press, New York (1964).

    MATH  Google Scholar 

  4. J. P. Donnelly, A. G. Foyt, E. D. Hinkley, W. T. Lindley, and J. O. Dimmock, Appl. Phys. Lett. 12, 303 (1968).

    Article  ADS  Google Scholar 

  5. G. W. Groves and A. Kelly, Phil. Mag. 7, 892 (1962).

    Article  Google Scholar 

  6. B. Edmonson and G. K. Williamson, Phil. Mag. 9, 277 (1964).

    Article  ADS  Google Scholar 

  7. L. Van der Pauw, Phillips Res. Rpt. 13, 1 (1958).

    Google Scholar 

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Author information

Authors and Affiliations

  1. Stanford University, Stanford, California, USA, 94305

    J. C. Bean & J. F. Gibbons

  2. Stanford Research Institute, Menlo Park, Cal., USA, 94025

    T. J. Magee & J. Peng

Authors
  1. J. C. Bean
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  2. J. F. Gibbons
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  3. T. J. Magee
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  4. J. Peng
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Editor information

Editors and Affiliations

  1. Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan

    Susumu Namba

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© 1975 Plenum Press, New York

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Bean, J.C., Gibbons, J.F., Magee, T.J., Peng, J. (1975). Ion Implantation of as in CdTe: Electrical Characteristics and Radiation Damage. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_29

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  • DOI: https://doi.org/10.1007/978-1-4684-2151-4_29

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-2153-8

  • Online ISBN: 978-1-4684-2151-4

  • eBook Packages: Springer Book Archive

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