Anomalous Annealing Behavior of Arsenic Implanted Silicon as a Function of Dose and Energy

Abstract

Anomalous annealing behavior of damage in As implanted Si has been investigated by channeling effect measurements. Room temperature As implants with doses from 10¹⁴ to 2 × 10¹⁶cm^-2 at energies ranging from 50 to 250 keV into <111> Si were annealed over the range of 600°C to 1100°C. Anneal temperatures ≥ 950°C reduce the disorder for ion doses of 0.5 to 1 × 10¹⁶ cm^-2 at energies between 50 and 250 keV. Anomalously high residual disorder was found for the intermediate doses of 2 × 10¹⁴ to 2 × 10/cm² implanted above 100 keV. For this intermediate dose, annealing of implants performed at liquid nitrogen temperatures did not show significant reduction in this damage. However implants at 200° to 300°C indicate a lower amount of damage compared to the room temperature implants.

Caltech work supported in part by O.N.R. (L. Cooper).