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Profiles; How Well Can Experimental Results be Explained by Theories ?

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Ion Implantation in Semiconductors

Abstract

This paper reviews the current status of theoretical and experimental investigations on the spatial distribution of implanted ions. The theoretical predictions show reasonably good agreement with the experimental results in both cases of uniform and double-layer substrates. Deformation of distributions due to secondary effects such as sputtering or expansion of the substrate is also discussed.

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Author information

Authors and Affiliations

  1. Res. Lab. of Precision Machinery and Electronics, Tokyo Institute of Technology, Tokyo, 152, Japan

    S. Furukawa

  2. Faculty of Engineering, Tokyo Institute of Technology, Tokyo, 152, Japan

    H. Ishiwara

Authors
  1. S. Furukawa
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  2. H. Ishiwara
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Editor information

Editors and Affiliations

  1. Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan

    Susumu Namba

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© 1975 Plenum Press, New York

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Furukawa, S., Ishiwara, H. (1975). Profiles; How Well Can Experimental Results be Explained by Theories ?. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_18

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  • DOI: https://doi.org/10.1007/978-1-4684-2151-4_18

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-2153-8

  • Online ISBN: 978-1-4684-2151-4

  • eBook Packages: Springer Book Archive

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