In-Depth Profile Detection Limits of Nitrogen in GaP, Nitrogen, Oxygen and Fluorine in Si by SIMS and AES

Abstract

Secondary Ion Mass Spectrometry (SIMS) and Auger Electron Spectroscopy (AES) have been used to determine the distribution of nitrogen in GaP ion implanted with nitrogen, and of nitrogen, oxygen, and fluorine ion implanted into silicon. The in-depth profile detectabilities for nitrogen in GaP are in the low 10¹⁸ atoms/cm³ range and upper 10¹⁹ atoms/cm³ range for SIMS and AES analyses, respectively. The in-depth profile detestability of SIMS for fluorine and oxygen is ~5x10¹⁶ and 10¹⁹ atoms/c.c.; AES in-depth detectability limits for oxygen and fluorine are in the 10²⁰ atoms/c.c. range.

Both nitrogen and oxygen in silicon have gaussian distributions with the projected range statistics agreeing with the LSS theoretical calculations. For nitrogen in GaP, a profile tail is observed by the SIMS technique. The profile tail could be due to channelled ions during ion implantation and a recoil process during SIMS measurements. For fluorine in silicon, a more pronounced tail was observed which can be attributed mostly to channelling and recoiling during ion implantation. Complicated profiles of fluorine were observed after annealina at temperatures above 500°C for the sample dose of 6xl0¹⁵ ions/cm².