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Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38

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Ion Implantation in Semiconductors

Abstract

High temperature annealing characteristics of electrical and photoluminescent properties of GaAs0.62P0.38 implanted with 50 keV Zn at room temperature have been studied. Electrical activities, approximately independent of Zn dose, increased with annealing temperature, and reached about 100% at 950°C. Previously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and effective surface carrier concentration was found. Qualitative explanation of annealing behaviors is presented.

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References

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Author information

Authors and Affiliations

  1. Central Research Laboratories, Nippon Electric Company, Ltd., Kawasaki, Japan

    H. Okabayashi

Authors
  1. H. Okabayashi
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Editor information

Editors and Affiliations

  1. Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan

    Susumu Namba

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© 1975 Plenum Press, New York

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Okabayashi, H. (1975). Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38 . In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_12

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  • DOI: https://doi.org/10.1007/978-1-4684-2151-4_12

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-2153-8

  • Online ISBN: 978-1-4684-2151-4

  • eBook Packages: Springer Book Archive

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