Abstract
Broad-band luminescence from ion-implanted ZnSe samples was measured as a function of isochronal annealing. Samples were implanted at room temperature with N, Br, or Ar ions. One conspicuous band, in the general location of 5400 Å, appears as a result of annealina to 130°C. The other broad band in the spectra is located at 6400 Å and is attributed to Se vacancies. The green (5400-Å)band disappears after heat treatment of the samples in molten Zn at 960°C. This emission is attributed to Zn vacancies. Strong complexing of VZn with BrSe and NSe is deduced from the wavelength shift of the peaks of the emission bands. Some enhancement of the 5400-Å band intensity is observed upon implantation with Ar.
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Santiago, J.J., Ehret, J.E., Woody, W.R., Park, Y.S. (1973). Annealing Studies of Broad-Band Luminescence from Ion-Implanted ZnSe. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_30
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DOI: https://doi.org/10.1007/978-1-4684-2064-7_30
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