Abstract
Sets of internally consistent equations, which are simple and convenient to use, have been derived by a new method to give explicit dependences of the thermodynamic properties of nineteen semiconductors; PbX, Y2X3 (X = S, Se, Te; Y= Bi, Sb) from 250°K to the melting point (with an accuracy of 0.5 to 3.0% and 1 to 4%), for semiconductors of the type InX (X =P, As, Sb) and GaX (X = As, Sb) from 30°K to the melting point (with an accuracy of 0.5 to 3%), for InSe from 30 to 400°K (with an accuracy of 0.1 to 0.8%), for BN, AlN, and SiC from 250 to 2900°K, 250 to 2700°K, and 250 to 3200°K, respectively, and for AlSb from 30°K to the melting point (with an accuracy of 0.5 to 3.0%)
“Semiconductors,” pp. 203–209 (see page 3).
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Maslov, P.G., Maslov, Y.P. (1972). Thermodynamic Properties of Some Semiconductors. In: Sirota, N.N. (eds) Chemical Bonds in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1686-2_33
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DOI: https://doi.org/10.1007/978-1-4684-1686-2_33
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