The experimentally obtained dependences of the charge trapped by the fast states on the surface potential, QSS(Y), can be described satisfactorily by various combinations of discrete levels as well as by continuous distributions of levels [68, 70, 115]. The field-effect data are clearly insufficient for a decision to be made in favor of one of the available models. The experimentally obtained curves have no characteristic points which could be used for level identification. The monotonic rise of the captured charge with increasing absolute value of the surface potential and the absence of inflection points in the experimental curves (such points could be used as “boundaries” between discrete levels) would seem to support the continuous distribution model. However, most of the investigators have interpreted their results using various combinations of discrete levels.
KeywordsSurface Potential Fast State Capture Cross Section Recombination Center Surface Recombination
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