Abstract
For the fabrication of long wavelength OptoElectronic Integrated Circuits (OEICs) there is a strong tendency towards the integration of InP/InGaAsP based optical and electronic components. The problems encountered due to the immature InPrelated technology for the fabrication of electronic devices are mainly due to the low Schottky barrier on InP materials. This makes it impossible to use the classical Metal Semiconductor Field Effect Transistor (MESFET) structures, which are well developed in the GaAs technology. Alternatively, more complex structures, such as Metal Insulator Semiconductor FETs (MISFET), Junction FETs (JFET) and Heterostructure Bipolar Transistors (HBT) are used.
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© 1991 Plenum Press, New York
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Ackaert, A. et al. (1991). GaAs on InP Based Optoelectronic Integrated Circuits for Optical Switching Networks. In: Beeby, J.L., Bhattacharya, P.K., Gravelle, P.C., Koch, F., Lockwood, D.J. (eds) Condensed Systems of Low Dimensionality. NATO ASI Series, vol 253. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1348-9_46
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