Skip to main content

GaAs on InP Based Optoelectronic Integrated Circuits for Optical Switching Networks

  • Chapter
Condensed Systems of Low Dimensionality

Abstract

For the fabrication of long wavelength OptoElectronic Integrated Circuits (OEICs) there is a strong tendency towards the integration of InP/InGaAsP based optical and electronic components. The problems encountered due to the immature InPrelated technology for the fabrication of electronic devices are mainly due to the low Schottky barrier on InP materials. This makes it impossible to use the classical Metal Semiconductor Field Effect Transistor (MESFET) structures, which are well developed in the GaAs technology. Alternatively, more complex structures, such as Metal Insulator Semiconductor FETs (MISFET), Junction FETs (JFET) and Heterostructure Bipolar Transistors (HBT) are used.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

eBook
USD 16.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. A. Suzuki, T. Itoh, T. Terakado, Y. Inomoto, K, Kasahara, K. Asano, S. Fujita, T. Torikai, J. Lightwave Techn., 5: 1479 (1987)

    Article  Google Scholar 

  2. A. Suzuki, T. Itoh, T. Terakado, K. Kasahara, K. Asano, Y. Inomoto, H. Ishihara, T. Torikai, S. Fujita, Electronic Letters, 23: 954 (1988)

    Article  Google Scholar 

  3. K. Kasahara, K. Asano, T. Itoh, Inst. Phys., Ser.No.91: 195 (1987)

    Google Scholar 

  4. Y. Lo, R. Bhat, T. Lee, Electronics Letters, 24: 865 (1988)

    Article  Google Scholar 

  5. Y. Lo, J. Harbison, J. Abeles, T. Lee, R. Nahory, IEEE Electron Device Lett., 9: 383 (1988)

    Article  Google Scholar 

  6. J. Harbison, Y. Lo, J. Abeles, R. Deri, B. Skromme, D. Hwang, L. Florez, M. Seto, L. Nazar, T. Lee, R. Nahory, J. Vac. Sci., B7: 345 (1989)

    Google Scholar 

  7. M. Van Ackere, A. Ackaert, I. Moerman, D. Lootens, P. Demeester, P. Van Daele, R. Baets, P. Lagasse, Electronics Letters, 25: 47 (1989)

    Article  Google Scholar 

  8. C. Chang-Hasnain, Y. Lo, R. Bhat, N. Stoffel, T. Lee, Appl. Phys. Lett., 54: 354 (1989)

    Google Scholar 

  9. M. Erman, G. Gillardin, J. LeBris, M. Renaud, Journ. of Crst. Growth, 96: 469 (1989)

    Article  Google Scholar 

  10. E. Yablanovitch, T. Gmitter, J. Harbison, R. Bhat, Appl. Phys. Lett., 51: 2222 (1987)

    Article  Google Scholar 

  11. Van Hoof, W. De Raedt, M. Van Rossum, G. Borghs, Electronics Letters, 25: 137 (1989)

    Article  Google Scholar 

  12. P. Demeester, P. Van Daele, I. Pollentier, W. Temmerman, P. Lagasse, D. Rondi, G. Glastre, A. Enard, R. Blondeau, P. Jarry, J. LeBris, M. Renaud, H. Angement, Proc. ECOC Conf. (1989) p 365.

    Google Scholar 

  13. I. Pellentier, P. Demeester, A. Ackaert, L. Buydens, P. Van Daele, R. Baets, Electronic Letters, 26: 194 (1990)

    Article  Google Scholar 

  14. E. Yablanovitch, E. Kapon, T. Gmitter, C. Yun, R. Bhat, IEEE Photonics Techn. Lett., 1: 41 (1989)

    Article  Google Scholar 

  15. A. Yi-Yan, W. Chan, T. Gmitter, L. Florez, J. Jackel, E. Yablanovitch, R. Bhat, J. Harbison, IEEE Photonics Techn. Lett., 1: 379 (1989)

    Article  Google Scholar 

  16. Y. Bourbin, A. Enard, R. Blondeau, M. Razeghi, D. Rondi, M. Papuchon, B. de Cremoux, Electronics Letters, 24: 221 (1988)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1991 Plenum Press, New York

About this chapter

Cite this chapter

Ackaert, A. et al. (1991). GaAs on InP Based Optoelectronic Integrated Circuits for Optical Switching Networks. In: Beeby, J.L., Bhattacharya, P.K., Gravelle, P.C., Koch, F., Lockwood, D.J. (eds) Condensed Systems of Low Dimensionality. NATO ASI Series, vol 253. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1348-9_46

Download citation

  • DOI: https://doi.org/10.1007/978-1-4684-1348-9_46

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-1350-2

  • Online ISBN: 978-1-4684-1348-9

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics