Abstract
In the conduction band of III-V semiconductors having cubic zinc-blende structure there are local energetic minima at the Γ, X and L points of the Brillouin zone. The idea that electrons in the conduction band are scattered by phonons between these valleys first became important in theories of the Gunn effect[1,2]. In recent years the intervalley scattering process has been extensively investigated in III–V semiconductors [3] mainly because of two reasons: first, ultrafast optical spectroscopy became available for investigating scattering processes which take place on a femtosecond timescale. Secondly, the transport properties of high-speed electronic semiconductor devices[4] are influenced by intervalley scattering.
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© 1991 Plenum Press, New York
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Feldmann, J. et al. (1991). Mechanism of Γ-X Electron Transfer in Type II (Al)GaAs/AlAs Superlattices and Multiple Quantum well Structures. In: Beeby, J.L., Bhattacharya, P.K., Gravelle, P.C., Koch, F., Lockwood, D.J. (eds) Condensed Systems of Low Dimensionality. NATO ASI Series, vol 253. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1348-9_15
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DOI: https://doi.org/10.1007/978-1-4684-1348-9_15
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