Skip to main content
SpringerLink
Log in
Book cover

Site Characterization and Aggregation of Implanted Atoms in Materials pp 457–468Cite as

Implantation in Optical Materials

  • Chapter

  • 103 Accesses

Part of the book series: NATO Advanced Study Institutes Series ((NSSB,volume 47))

Abstract

The review will emphasise the uses of ion implantation for control of optical properties of materials. In most respects the addition of ions by implantation produces similar results in both insulators and semiconductors because of new levels in the valence-conduction band gap. Consequently one is able to control such properties as luminescence, optical absorption, ESR and refractive index. Historically the techniques involving ion beams have received little attention for applications to property changes in insulators but the range of examples will indicate the possibilities are worth exploiting. The studies mentioned include searches for trace impurities in luminescence, determinations of defect structures, and production of optical waveguides and information storage systems.

On leave of absence from the School of Mathematical and Physical Sciences, University of Sussex, Brighton, BNl 9QH, England.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Mayer J.W., Eriksson L. and Davies J.A. “Ion Implantation in Semiconductors”, Academic Press, 1970.

    Google Scholar 

  2. Dearnaley G., Freeman J.H., Nelson R.S. and Stephen J. “Ion Implantation”, North Holland, 1973.

    Google Scholar 

  3. Carter G. and Grant W.A. “Ion Implantation in Semiconductors”, Arnold, 1976.

    Google Scholar 

  4. Agajanian A.H. Rad. Effects, 23, 73, 1974.

    Article  Google Scholar 

  5. Townsend P.D., Kelly J.C. and Hartley N.E.W. “Ion Implantation, Sputtering and their Applications” Academic Press, 1976.

    Google Scholar 

  6. Crowder B.L. (Ed) “Ion Implantation in Semiconductors and Other Materials “Yorktown Heights 1972)”, Plenum Press, 1973.

    Google Scholar 

  7. Crowder B.L. (Ed) “Ion Implantation in Semiconductors and Other Materials (Osaka 1974)”, Plenum Press, 1975.

    Google Scholar 

  8. Chernow F. (Ed) “Ion Implantation in Semiconductors and Other Materials (Boulder 1976)”, Plenum Press, 1977.

    Google Scholar 

  9. “Applications of Ion Beams to Materials” (Warwick 1975), Inst, of Physics Conf. Ser. 28, 1976.

    Google Scholar 

  10. Townsend P.D. J. Phys. E, 10, 197, 1977.

    Article  ADS  Google Scholar 

  11. Townsend P.D. and Valette S. “Optical Effects of Ion Implantation” in “Ion Implantation in Materials Science and Technology” (Ed J.K. Hirvoven), Academic Press, 1979.

    Google Scholar 

  12. Mayhugh M.R. J. Appl. Phys., 41, 4776, 1970.

    Article  ADS  Google Scholar 

  13. Wintersgill M.C., Townsend P.D. and Cusso-Perez F. J. de Phys. C7, 123, 1977.

    Google Scholar 

  14. Townsend P.D., Taylor G.C. and Wintersgill M.C. to be published.

    Google Scholar 

  15. Wintersgill M.C. and Townsend P.D. Phys. Stat. Sol. (a), 47, K67, 1978.

    Article  ADS  Google Scholar 

  16. Hughes A.E. and Pells G.P. J. Phys. C., 7, 3997, 1974.

    Article  Google Scholar 

  17. Dearnaley G., Goode P.D. and Turner J.F. 1971, cited p. 714 of ref. 2.

    Google Scholar 

  18. Hanle W. and Rau K.H. Z. Physik, 133, 297, 1952.

    Article  ADS  Google Scholar 

  19. Van Wijngaarden A. and Hastings L. Can. J. Phys. 45, 2239, 3803, 4039, 1967.

    Google Scholar 

  20. Takagi T., Yamada I. and Kimura H. ref. 7, p. 17.

    Google Scholar 

  21. Kushiro Y. and Kobayashi T. ref. 7, p. 47 I

    Google Scholar 

  22. Hemenger P.M. and Dobbs B.C. Appl. Phys. Lett. 23, 462, 1973.

    Article  ADS  Google Scholar 

  23. Streetman B.C., Anderson R.E. and Wolford D.J. J. Appl. Phys., 45, 974, 1974.

    Google Scholar 

  24. Demars D., Quillec M., Ravetto M., Marine J. and Guernet G. ref. 7, p. 235.

    Google Scholar 

  25. Bryant F.J. and Nahum J. J. Rad. Effects, 31, 106, 1977.

    Google Scholar 

  26. Chandler P.J. D. Phil, thesis, Sussex, 1977.

    Google Scholar 

  27. Mattern P.L., Thomas G.J. and Bauer W. J. Vac. Sci. Technol., 13, 430, 1976.

    Article  ADS  Google Scholar 

  28. Patrick L. and Choyke W.J. Phys. Rev. B8, 1660, 1973.

    ADS  Google Scholar 

  29. Townsend P.D. and Kelly J.C. “Colour Centres and Imperfections in Insulators and Semiconductors”, Sussex Press, 1973.

    Google Scholar 

  30. Pooley D. Brit. J. Appl. Phys., 17, 855, 1966.

    Article  ADS  Google Scholar 

  31. Saidoh M. and Itoh N. J. Phys. Chem. Solids, 34, 1167, 1973.

    Article  ADS  Google Scholar 

  32. Hughes A.E. and Pooley D. J. Phys. C, 4, 1963, 1971.

    Article  Google Scholar 

  33. Davenas J., Perez A. and Dupuy C. J. de Phys. C7, 37, 531, 1976.

    Google Scholar 

  34. Chassagne G., Hobbs L.W. and Serughetti J. J. de Phys. C2, 38, 229, 1977.

    Google Scholar 

  35. Kaufman J.V.R.K. 1961, Private communication.

    Google Scholar 

  36. Destefanis G.L. Doctoral thesis, Grenoble 1978.

    Google Scholar 

  37. Thevenard P. J. de Phys. C7, 37, 526, 1976.

    Google Scholar 

  38. Krefft G.B. J. Vac. Sci. Technol., 14, 533, 1977.

    Article  ADS  Google Scholar 

  39. Arnold G.W., Krefft G.B. and Norris C.B. Appl. Phys. Lett., 25, 540, 1974.

    Article  ADS  Google Scholar 

  40. EerNisse E.P. and Norris C.B. J. Appl. Phys., 45, 167, 3876, 5196, 1974.

    Article  ADS  Google Scholar 

  41. Evans B.D. and Hendricks H.D. ref. 8 paper IV-2.

    Google Scholar 

  42. Peercy P.S. Proc. Int. Conf. in Insulating Crystals, Gatlinburg 1977, ORNL Conf. 771002, p. 335.

    Google Scholar 

  43. Saidoh M. and Townsend P.D. J. Phys. C, 10, 1541, 1977.

    Article  ADS  Google Scholar 

  44. 44.Chandler P.J. and Townsend P.D. To be published.

    Google Scholar 

  45. Tamir T. (Ed) “Integrated Optics”, Springer-Verlag, 1975.

    Google Scholar 

  46. Special issue of IEEE Trans. Microwave Theory and Technol. 23, n° 1, 1975.

    Google Scholar 

  47. Tien P.K. Rev. Mod. Phys. 49, 361, 1977.

    Article  ADS  Google Scholar 

  48. Schineller E.R., Flam R.P. and Wilmot D.W. J. Opt. Soc. Amer. 58, 1171, 1968.

    Article  ADS  Google Scholar 

  49. Webb A.P. and Townsend P.D. J. Phys. D, 9, 1343, 1976.

    Article  ADS  Google Scholar 

  50. Kaminow I.P. and Carruthers J.R. Appl. Phys. Lett., 22, 326, 1973.

    Article  ADS  Google Scholar 

  51. Shah M.L. Appl. Phys. Lett., 26, 652, 1975.

    Article  ADS  Google Scholar 

  52. Ranganath T.R. and Wang S. Appl. Phys. Lett., 30, 376, 1977.

    Article  ADS  Google Scholar 

  53. Destefanis G.L., Townsend P.D. and Gailliard J.P. Appl. Phys. Lett., 32, 293, 1978.

    Article  ADS  Google Scholar 

  54. Garvin H.L., Garmire E., Somekh S., Stoll H. and Yariv A. Appl. Optics, 12, 445, 1973.

    Article  ADS  Google Scholar 

  55. Valette S., Labrunie G., Deutsch J.C. and Lizet J. Appl. Optics, 16, 1289, 1977.

    Article  ADS  Google Scholar 

  56. Evtuhov V. and Yariv A. IEEE Trans. Microwave Theory and Technol., 23, 44, 1975.

    Article  ADS  Google Scholar 

  57. Nishimura T., Aritome H., Masuda K. and Namba S. Japanese J. Appl. Phys., 13, 1317, 1974.

    Article  ADS  Google Scholar 

  58. Magee T.J. and Lehmann M. ref. 9, p. 112.

    Google Scholar 

  59. Schneider I., Lehmann M. and Bocker R. Appl. Phys. Lett., 25, 77, 1974.

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. LETI/MEP CEN/G., 85 X 38041, Grenoble Cedex, France

    P. D. Townsend

Authors
  1. P. D. Townsend
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Université Claude Bernard Lyon I, Villeurbanne, France

    A. Perez

  2. University of Leuven, Leuven, Belgium

    R. Coussement

Rights and permissions

Reprints and permissions

Copyright information

© 1980 Plenum Press, New York

About this chapter

Cite this chapter

Townsend, P.D. (1980). Implantation in Optical Materials. In: Perez, A., Coussement, R. (eds) Site Characterization and Aggregation of Implanted Atoms in Materials. NATO Advanced Study Institutes Series, vol 47. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1015-0_26

Download citation

  • DOI: https://doi.org/10.1007/978-1-4684-1015-0_26

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-1017-4

  • Online ISBN: 978-1-4684-1015-0

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation