Abstract
The term “radiation effects” is usually used to describe the secondary phenomena which occur after a high-energy photon or particle has passed through a solid lattice and disturbed it by transferring momentum to some atoms or by raising some atoms to electronically excited states. While these primary transfers of energy are predictable and roughly similar in form for all elements and compounds, the sequelae depend very strongly on the chemical and physical structure of the solid. For thin films, we should thus observe virtually all the effects expected in the corresponding bulk material, to which will be added a range of effects characteristic of the thin-film state such as surface effects, non-stoichiometry, high impurity levels, strain and disorder. Also, since thin films are frequently used in electronic devices, we must interest ourselves in effects associated with drift or displacement of electrons, holes or ions. This variety makes the investigation of radiation effects in thin films a challenging task especially since the nature of thin films eliminates several of the conventional investigative tools used for bulk crystals. However, because of its technological importance, the field continues to develop.
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References
A.G. Holmes-Siedle, Reports of Progress in. Physics, 37 (6), 669 (1974).
W.L. Brown, J.D. Gabbe and W. Rosenzweig, Bell Syst. Tech. 42 1505 (1963).
W.S. West, W.J. Poch, A.G. Holmes-Siedle and D. Carroll NASA TR-R-371 (Washington NASA 1971).
A.G. Holmes-Siedle, Nature 251, 191 (1974).
A. Charlesby, Atomic Radiation and Polymers (Oxford Pergamon) p. 52 (1960).
S. Glasstone, The Effects of Nuclear Weapons (US Atomic. Energy Commission: Washington DC 1962).
G.M. McCracken and S. Blow, UKAEA Culham Report No.CLM-R120 (1972).
W.J. Poch and A.G. Holmes-Siedle, IEEE Trans. Nucl. Sci. NS 15 (6) 213 (1968).
J.W. Corbett, “Electron Radiation Damage in Semiconductors and Metals “New York, Academic Press, (1966).
S. Braun and H.G. Grimmeiss, J. Appl. Phys. 45, 2658 (1974).
P. Balk, “Solid-State Devices, 1973” Conference Series n°19 (Institute of Physics, London) (1974).
P.J. Mitchell and DeNure, Solid State Electronics 16, 825 (1973).
P.A. Walley and A.K. Jonscher, Thin Solid Films 1, 367 (1967).
S.M. Sze, J. Appl. Phys. 38, 2951 (1967).
R.H. Walden, J. Appl. Phys. 43, 1178 (1972).
T. Tsujide and K. lida, Japan J. Appl. Phys. 11, 600 (1972).
C.A.T. Salama, J. Electrochem. Soc. 117, 913 (1970).
E. Harari and B.S.H. Royce, IEEE Trans. Nucl. Sci. NS-20 (6) 280 (1973).
A.J. Bennett, and L.M. Roth, J. Phys. Chem. Solids 32, 1251 (1971).
E. Harari and A.G. Holmes-Siedle, Bull. Am. Phys. Soc., Ser II, 16, 500 (1971).
T.W. Hickmott, J. Appl. Phys. 42 (6), 2543 (1971).
A.S. Grove, “Physics and Technology of Semiconductor Devices” Wiley, N.Y. (1967).
K.H. Zaininger, RCA Review 27, 341 (1966).
K.H. Zaininger, IEEE Trans. Nucl. Sci. NS-13 (6) 237 (1966).
P.J. Mitchell, IEEE Trans. Electron. D. v ED-14 (11) 764 (1967).
A.G. Holmes-Siedle and K.H. Zaininger, IEEE Trans, on Reliability, 17, 34 (1968).
B. Andre, J. Buxo, D. Esteve and H. Martinot, Solid State Electronics 12, 123 (1969).
H.L. Hugues, R.D. Baxter and B. Phillips, IEEE Trans. Nucl. Sci. NS-19 (6) 256 (1972).
C.W. Gwyn, J. App. Phys. 40 (12), 4886 (1969).
C. Emms, A.G. Holmes-Siedle, I. Groombridge and J.R. Bosnell, IEEE Trans. Nucl. Sci., to be published.
H.L. Hughes, Proc. IEEE Reliability Physics. Las Vegas (March 1971).
T.J. Russell, T. Pandolfi and B.S.H. Royce, Colour Centre Conference, Japan (1974).
R. Williams, Phys. Rev. 140 (2A), 569 (1965).
A. Goodman, Phys. Rev. 152 (2), 780 (1966).
E.H. Snow, A.S. Grove and D.J. Fitzgerald, Proc. IEEE, 55 1 168 (1967).
R.J. Powell, J. Appl. Phys. 41, (6), 2424 (1970).
J.F. Verwey, Appl. Phys. Lett. 43, 2273 (1972).
K.H. Zaininger, Appl. Phys. Letters 8, 140(1966).
J.L. Peel, R.A. Kjar and R.C. Eden, Appl. Phys. Lett. 17, 3 (1970).
T.H. Di Stefano and D.E. Eastman, Solid State Commun. 9, 2259 (1971).
R.J. Powell, (Private Communication).
R.J. Powell and Derbenwick, IEEE Trans. Nucl. Sci. NS-18 (6) 99 (1970).
H.R. Philipp, J. Phys. Chem. Solids 32, 1935 (1971).
W.J. Dennehy, A.G. Holmes-Siedle and K.H. Zaininger, RCA Review 30, (4) 668 (1969).
A.G. Holmes-Siedle and W.J. Poch, Brit. Interplan. Soc. 24 273 (1971).
R.A. Burghard and C.W. Gwyn, IEEE Trans. Nucl. Sci. NS-20 (6) 300 (1973)
W.J. Poch and A.G. A.G. Holmes-Siedle, IEEE Trans. Nucl. Sci. NS-17 (6) 33 (1970).
J.T. Edmond, J.C. Male and P.F. Chester, J. Phys. E. Sci. Instrum. 1, 373 (1968).
S.R. Ovshinsky, E.J. Evans, D.C. Nelson and H. Fritzsche, IEEE Trans. Nucl. Sci. NS-15 (6), 311 (1968).
R.G. Nicolaides and L.W. Doremus, J. Noncryst. Solids 8–10 (1972).
T.M. Flannagan and M.E. Wyatt, J. Noncryst. Solids 2, 229 (1970).
C.W. Chen and D.M. Bailey, Radiation Effects 10, 65 (1971).
J. Bosnell and C.B. Thomas, Solid. St. Electron. 15, 1261 (1972).
L.L. Hench, J. Noncryst. Solids 2, 229 (1970).
D. Adler, H.K. Bowen, L.P.C. Ferrard, D.D. Merchant, R.N. Singh and J.A. Sauvage J. Noncryst. Solids 8–10, 844 (1972).
R. Grogorivici, Thin Solid Films, 12, 153 (1972).
J.A. Olley and A.D. Yoffe, J. Noncryst. Solids 8–10, 850 (1972).
G. Dearnaley, J.H. Freemann, R.S. Nelson and J. Stephen, Ion Implantation (Amsterdam, North Holland) (1973).
R.D. Standley, W.M. Gibson and J.W. Rogers, Appl. Optics 11 (6) 1313 (1972).
Chadderton, “Fission Damage in Crystals” (Methuen, London) (1969).
R.A. Sigsbee and R.H. Wilson, Appl Phys. Lett. 23 (10) 541 (1973).
D.J. Stirland, “The use of Thin Films in Scientific Investigations” (J.C. Anderson Ed. Academic Press. N.Y.), p. 172 (1966).
V. Danchenko, U.D. Desai and S.S. Brashears, J. Appl. Phys. 39, 2417 (1968).
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Holmes-Siedle, A. (1976). Radiation Effects in Thin Films. In: Dupuy, C.H.S., Cachard, A. (eds) Physics of Nonmetallic Thin Films. NATO Advanced Study Institutes Series, vol 14. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-0847-8_14
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DOI: https://doi.org/10.1007/978-1-4684-0847-8_14
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