Abstract
In thin films, with their amorphous or polycrystalline structure, a large number of dielectric polarization mechanisms are possible. These can be classified into two rather general groupings: those which occur due to the presence of interfaces and those which are characteristic of the thin film material itself. That is, this latter category does not owe its existence in any way to interfaces whereas the former exists because of interfaces. The mechanism basic to the first category is the presence of concentration modifications at electrodes and at interfaces, which may occur within the film. Although such interface effects are usually dismissed in dealing with bulk dielectric properties, they may dominate in thin film structures. Consequently their probable presence cannot be taken lightly. It should be pointed out that even in thick “bulk” samples of material it is well known that the interface effects can dominate as is the case for electrets.
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Fonash, S.J. (1976). Dielectric Properties of Thin Films: Polarization and Effective Polarization. In: Dupuy, C.H.S., Cachard, A. (eds) Physics of Nonmetallic Thin Films. NATO Advanced Study Institutes Series, vol 14. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-0847-8_10
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DOI: https://doi.org/10.1007/978-1-4684-0847-8_10
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