Abstract
Any discussion of imperfect solids must necessarily define both what is meant by a perfect solid and the various types of imperfections that are commonly encountered. A complete discussion of chemical and structural defects in solids has already been given in Chapter 5 of Volume 1. However, since transport properties are so dependent on imperfections and since we wish to discuss amorphous solids in detail, a brief outline of order and disorder is presented here.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
J. M. Ziman, Electrons and Phonons, Oxford Univ. Press, London (1960).
C. E. Moore, Atomic Energy Levels, Nat. Bur. Std. (U.S.) Circ. No. 467, Vol. I-III (1949–58).
E. U. Condon and G. H. Shortley, Theory of Atomic Spectra, Cambridge Univ. Press (1935).
G. F. Köster and J. C. Slater, Simplified impurity calculation, Phys. Rev. 96, 1208–1233 (1954).
W. Kohn, in Solid State Physics, Vol. 5, pp. 257–320, Academic Press, New York (1957).
F. C. Brown, Physics of Solids, W. A. Benjamin, New York (1967).
D. Adler, in Physics of Electronic Ceramics, (L. L. Hensch and D. B. Dove, eds.), Part A, pp. 29–66, Marcel Dekker, New York (1971).
D. Weaire, Vol. 1, Chapter 2 of this Treatise.
S. C. Moss and J. F. Graczyk, Evidence of voids within the as-deposited structure of glassy silicon, Phys. Rev. Lett. 23, 1167–1171 (1969).
D. Adler, Amorphous Semiconductors, CRC Press, Cleveland, Ohio (1971).
L. Vao Hove, The occurrence of singularities in the elastic frequency distribution of a crystal, Phys. Rev 89, 1189–1193 (1953).
F. J. Blatt, Physics of Electronic Conduction in Solids, McGraw-Hill, New York (1968).
D. K. C. MacDonald, Thermoelectricity, Wüey, New York (1962).
A. H. Wilson, Theory of Metals, Cambridge Univ. Press, London (1953).
N. F. Mott, The transition to the metallic state, Phil. Mag 6, 287–309 (1961).
D. Adler and J. Feinleib, Electrical and optical properties of narrow-band materials, Phys. Rev. B 2, 3112–3134 (1970).
J. Hubbard, Electron correlations in narrow energy bands, Proc. Roy. Soc. A 276, 238–257 (1963).
J. Hubbard, Electron correlations in narrow energy bands. III. An improved solution, Proc. Roy. Soc. A 281, 401–419 (1964).
G. Kemeny and L. G. Caron, Self-consistent pair correlations in Mott-type insulators, Phys. Rev 159, 768–774 (1967).
G. W. Pratt and L. B. Caron, Correlation and magnetic effects in narrow-energy bands, J. Appl. Phys. 39, 485–486 (1968).
R. A. Bari, D. Adler, and R. V. Lange, Electrical conductivity in narrow energy bands, Phys. Rev. B 2, 2898–2905 (1970).
N. Ohata and R. Kubo, Electrical conduction in a narrow band: 1. Moment method, J. Phys. Soc. Japan 28, 1402–1412 (1970).
W. F. Brinkman and T. M. Rice, Single particle excitations in magnetic insulators, Phys. Rev. B 2, 1324–1338 (1970).
N. Ohata, Electrical conduction in a narrow band: IL Effect of randomness in atomic distributions, J. Phys. Soc. Japan 29, 1138–1144 (1970).
D. C. Langreth, Hall coefficient of Hubbard’s model, Phys. Rev. 148, 707–711 (1966).
D. Adler, in Solid State Physics, Vol. 21, pp. 1–113, Academic Press, New York (1968).
W. F. Brinkman and T. M. Rice, Hall effect in the presence of strong spin-disorder scattering, Phys. Rev. B 4, 1566–1571 (1971).
D. M. Edwards and A. C. Hewson, Comment on Hubbard’s theory of the Mott transition. Rev. Mod. Phys. 40, 810–811 (1968).
W. F. Brinkman and T. M. Rice, Application of Gutzwiller’s variational method to the metal-insulator transition, Phys. Rev. B 2, 4302–4304 (1970).
M. C. Gutzwiller, Correlation of electrons in a narrow s band, Phys. Rev. 137, A1726-A1735 (1965).
H. Fröhlich, Electrons in lattice fields. Adv. Phys 3, 325–361 (1954).
G. R. Allcock, On the polaron rest energy and effective mass. Adv. Phys. 5, 412–451 (1956).
R. P. Feynman, Slow electrons in a polar crystal, Phys. Rev 97, 660–665 (1955).
T. Holstein, Studies of polaron motion: 1. The Molecular-crystal model, Ann. Phys. (N. Y.) 8, 325–342 (1959).
T. Holstein, Studies of polaron motion: IL The “small” polaron, Ann. Phys. (N.Y.) 8, 353–389 (1959).
L. D. Landau, On the motion of electrons in crystal lattices, Phys. Z. Sowjetunion 3, 664–665 (1933).
L G. Austin and N. F. Mott, Polarons in crystalline and non-crystalline materials. Adv. Phys 18, 41–102 (1969).
L. Friedman and T. Holstein, Studies of polaron motion: III. Hall mobility of the small polaron, Ann. Phys. (N. Y.) 21, 494–549 (1963).
Yu. A. Firsov, Theory of the Hall effect in low-mobility semiconductors, Soviet Phys.—Solid State 5, 1566–1580 (1964).
J. Schnakenberg, The Hall coefficient of the small polaron, Z. Physik 185, 123–138 (1965).
T. Holstein and L. Friedman, Hall mobility of the small polaron, II. Phys. Rev. 165, 1019–1031 (1968).
Yu. A. Firsov, Hall effect in polaron semiconductors, Soviet Phys.—Solid State 10, 2387–2394 (1969).
D. Emin, The Hall mobility of a small polaron in a square lattice, Ann. Phys. (N.Y.) 64, 336–395 (1971).
A. Miller and E. Abrahams, Impurity conduction at low concentrations, Phys. Rev. 120, 745–755 (1960).
N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, Oxford Univ. Press, London (1971).
N. F. Mott, Electrons in disordered structures, Adv. Phys. 16, 49–144 (1967).
N. F. Mott, Conduction in non-crystalline systems: I. Localized electronic states in disordered systems, Phil. Mag. 17, 1259–1268 (1968).
E. N. Economou and M. H. Cohen, Localization in disordered materials: existence of mobility edges, Phys. Rev. Lett. 25, 1445–1448 (1970).
T. P. Eggarter and M. H. Cohen, Simple model for density of states and mobility of an electron in a gas of hard-core scatterers, Phys. Rev. Lett. 25, 807–810 (1970).
S. F. Edwards, The localization of electrons in disordered systems, J. Non-Crystall. Solids 4, 417–425 (1970).
N. F. Mott, Conduction in non-crystalline systems: IV. The minimum metallic conductivity, Phil. Mag. 26, 1015–1026 (1972).
J. M. Ziman, The localization of electrons in ordered and disordered systems: 1. Percolation of classical particles, J. Phys. C 1, 1532–1538 (1968).
H. L. Frisch, J. M. Hanmaersley, and D. J. A. Welsh, Monte-Carlo estimates of percolation probabilities for various lattices, Phys. Rev. 126, 949–951 (1962).
B. J. Last and D. J. Thouless, Percolation theory arid electrical conductivity, Phys. Rev. Lett. 27, 1719–1721 (1971).
D. Adler, L. P. Flora, and S. D. Senturia, Electrical conductivity in disordered systems, Solid State Commun. 12, 9–12 (1973).
M. H. Cohen, H. Fritzsche, and S. R. Ovshinsky, Simple band model for amorphous semiconducting alloys, Phys. Rev. Lett. 22, 1065–1068 (1969).
D. Adler and J. Feinleib, in Electronic Density of States (L. H. Bennett, ed.), Nat. Bur. Std. Special Publication No. 323, pp. 493–504, U.S. Government Printing Office, Washington, D.C. (1971).
N. F. Mott, Conduction in non-crystalline materials: III. Localized states in a pseudogap and near extremities of conduction and valence bands, Phil. Mag. 19, 835–852 (1969).
N. F. Mott, Conduction in glasses containing transition-metal ions, J. Non-Cry stall Solids 1, 1–17 (1968).
V. Ambegaokar, B. I. Halperin, and J. S. Langer, Hopping conductivity in disordered systems, Phys. Rev. B 4, 2612–2620 (1971).
M. Pollack, A percolation treatment of dc hopping conduction, Non-CrystalL Solids 8–10, 486–491 (1972).
D. Jerome, T. M. Rice, and W. Kohn, Excitonic insulator, Phys. Rev. 158, 462–475 (1967).
B. L Halperin and T. M. Rice, in Solid State Physics, Vol. 21, pp. 115–192, Academic Press, New York (1968).
B. I. Halperin and T. M. Rice, Possible anomalies at a semimetal-semiconductor transition. Rev. Mod. Phys. 40, 755–766 (1968).
J. Zittarz, Transport properties of the “excitonic insulator”: Electrical conductivity, Phys. Rev. 165, 605–611 (1968).
D. Adler and H. Brooks, Theory of semiconductor-to-metal transitions, Phys. Rev. 155, 826–840 (1967).
D. Adler and J. Feinleib, Semiconductor-to-metal transition in V2O3, Phys. Rev. Lett. 12, 700–703 (1964).
J. J. Hallers and G. Vertogen, Electronically induced crystallographic transition, Phys. Rev. B 4, 2351–2357 (1971).
D. Adler, Mechanisms for metal-nonmetal transitions in transition-metal oxides and sulfides, Rev. Mod. Phys. 40, 714–736 (1968).
I. Nebenzahl and M. Weger, Band structure and lattice distortion in V2O3, Phys. Rev. 184, 936–941 (1969).
D. Adler, in Critical Phenomena in Alloys, Magnets and Superconductors (R. E. Mills, E. Ascher, and R. I. Jaffee, eds.), pp. 567–591, McGraw-Hill, New York (1971).
W. Paul, The present position of theory and experiment for VO2, Mat. Res. Bull. 5, 691–702 (1970).
C. J. Hearn, The metal-insulator transition in VO2, Phys. Lett. 38A, 447–448 (1972).
D. Adler, Antiferromagnetism in Ti203, Phys. Rev. Lett. 17, 139–141 (1966).
J. C. Slater, Magnetic effects and the Hartree-Fock equation, Phys. Rev. 82, 538–541 (1951).
L. N. Bulaevskii and D. I. Khomskii, Insulator-metal phase transitions in anti-ferromagnets, Soviet Phys.—Solid State 9, 2422–2426 (1968).
E. Hanamura, Lattice instability associated with metal-semiconductor transitions, Rev. Mod. Phys. 40, 744–747 (1968).
N. Kristoffel and P. Konsin, Displacive vibronic phase transitions in narrow-gap semiconductors, Phys. Stat. Sol. 28, 741–739 (1968).
A. G. Aronov and E. K. Kudinov, Phase transition in strong electron-phonon interaction, Soviet Phys.—JETP 28, 704–709 (1069).
D. C. Mattis and W. D. Langer, Role of phonons and band structure in metal-insulator phase transition, Phys. Rev. Lett. 25, 376–380 (1970).
D. C. Mattis, Role of phonons in metal-insulator phase transition, J. de Physique 32 (Suppl. CI), 1086–1089 (1971).
A. M. de Graaf and R. Luzzi, Crystallographic distortion, electron-electron interaction and the metal-nonmetal transition, Helv. Phys. Acta 41, 764–766 (1968).
J. J. Hallers, Theories on the metal-nonmetal transition, Ph.D. Thesis, Univ. of Groningen (1972).
K. Elk, On a criterion for antiferromagnetism connected with the metal-insulator phase transition, Phys. Stat. Sol. 45, 305–309 (1971).
D. Pines, in Solid State Physics, Vol. 1, pp. 368–450 (1955).
H. Fröhlich, in Quantum Theory of Atoms, Molecules, and the Solid State (P. O. Lowdin, ed.), pp. 465–468, Academic Press, New York (1966).
D. Adler, unpublished work, 1964; see discussion to paper by G. J. Hyland, Rev. Mod. Phys. 40, 739–742 (1968).
S. Doniach, The insulator-metal transition. Adv. Phys. 18, 819–848 (1969).
L. M. Falicov and J. C. Kimball, Simple model for semiconductor-metal transitions:SmBé and transition-metal oxides, Phys. Rev. Lett. 22, 997–999 (1969).
R. Ramirez, L. M. Falicov, and J. C. Kimball, Metal-insulator transitions: A simple theoretical model, Phys. Rev. B 2, 3383–3393 (1970).
B. Alascio, A. Lopez, and V. Grunfeld, A model for the phase diagram of (V(1-x)Crx)2O3, Solid State Commun. 9, 1711–1713 (1971).
L. M. Falicov and C. E. T. Goncalves da Silva, Metal-insulator and magnetic phase transitions: A thermodynamic model. Solid State Commun. 10, 455–458 (1972).
J. C. Kimball, Magnetic metal-nonmetal transitions: A simple model, Phys. Rev. Lett. 29, 127–130 (1972).
P. Soven, Coherent-potential model of substitutional disordered alloys, Phys. Rev. 156, 809–813 (1967).
M. Plischke, Coherent potential approximation calculation on the Falicov-Kimball model of the metal-insulator transition, Phys. Rev. Lett. 28, 361–363 (1972).
C. E. T. Goncalves da Silva and L. M. Falicov, Metal-insulator transitions: A coherent potential approximation, J. Phys. C 5, 906–913 (1972).
J. R. Townsend, Solid-state absorption spectra of Mg and MgO, Phys. Rev. 92, 556–560 (1953).
J. Yamashita, Oxygen band in magnesium oxide, Phys. Rev. 111, 733–735 (1958).
F. A. Kroger, Point defects and phase stability of transition-metal compounds, J. Phys. Chem. Solids 29, 1889–1899 (1968).
R. E. Watson, Iron series Hartree-Fock calculations, Phys. Rev. 118, 1036–1045 (1960).
W. Low, Paramagnetic and optical spectra of divalent nickel in cubic crystalline fields, Phys. Rev. 109, 247–255 (1958).
G. K. Wertheim and S. Hufner, X-ray photoemission band structure of some transition-metal oxides, Phys. Rev. Lett. 28, 1028–1031 (1972).
D. M. Roessler and W. C. Walker, Electronic spectrum and ultraviolet optical properties of crystalline MgO, Phys. Rev. 159, 733–738 (1967).
V. A. Fomichev, T. M. Zimkina, and I. I. Zhukova, Investigation of the energy structure of MgO by ultrasoft X-ray spectroscopy, Soviet Phys.—Solid State 10, 2421–2427 (1969).
B. Henderson and J. E. Wertz, Defects in the alkaline earth oxides, Adv. Phys. 11, 749–855 (1968).
E. Yamaka and K. Sawamoto, Electrical conductivity and thermoelectric motive force in MgO single crystals, J.Phys. Soc. Japan 10, 176–179 (1955).
R. Mansfield, The electrical conductivity and thermoelectric power of magnesium oxide, Proc. Phys. Soc. (London) B66, 612–614 (1953).
A. Lempicki, The electrical conductivity of MgO single crystals at high temperatures, Proc. Phys. Soc. (London) B66, 281–283 (1953).
S. P. Mitoff, Electrical conductivity of single crystals of MgO, J. Chem. Phys. 31, 1261–1269 (1959).
S. P. Mitoff, Electronic and ionic conductivity in single crystals of MgO, J. Chem. Phys. 36, 1383–1389 (1962).
M. O. Davies, Transport phenomena in pure and doped magnesium oxide, J. Chem. Phys. 38, 2047–2055 (1963).
T. J. Lewis and A. J. Wright, The electrical conductivity of magnesium oxide at low temperatures, Brit. J. Appl. Phys. (J. Phys. D.) 1, 441–447 (1968).
R. Lindner and G. D. Parfitt, Diffusion of radioactive magnesium in magnesium oxide crystals, J. Chem. Phys. 26 182–185 (1957).
S. P. Mitoff, Bulk vs. surface conductivity of MgO crystals, J. Chem. Phys. 41, 2561–2562 (1964).
N. A. Surplice, The electrical conductivity of calcium and strontium-oxides, Brit. J. Appl. Phys. 11, 175–180 (1966).
W. D. Copeland and R. A. Swalin, Studies on the defect structure of strontium oxide, J. Phys. Chem. Solids 29, 313–325 (1968).
C. G. Fonstad and R. H. Rediker, Electrical properties of high-quality stannic-oxide crystals, J. Appl. Phys. 42, 2911–2918 (1971).
D. Adler, Electrical and optical properties of transition-metal oxides. Radiation Effects 4, 123–131 (1970).
J. B. Goodenough, MetalHc oxides, Progr. Solid State Chem 5, 145–399 (1971).
J. A. Wilson, Systematics of the breakdown of Mott insulation in binary transition-metal compounds. Adv. Phys. 21, 143–198 (1972).
A. Ferretti, D. B. Rogers, and J. B. Goodenough, The relation of the electrical conductivity in single crystals of rhenium trioxide to the conductivities of Sr2MgReO6 and NaxWO3, J. Phys. Chem. Solids 26, 2007–2011 (1965).
L. F. Mattheiss, Band structure and Fermi surface of ReO3, Phys. Rev. 181, 987–1000 (1969).
L. F. Mattheiss, Crystal-field effects in the tight-binding approximation: ReO3 and perovskite structures, Phys. Rev. B 2, 3918–3935 (1970).
S. M. Marcus, Measurement of the de Haas-van Alphen effect in the transition-metal oxide ReO3, Phys. Lett. 21 A, 584–585 (1968).
J. E. Graebner and E. S. Greiner, Magnetbthermal oscillations and the Fermi surface of ReO3, Phys. Rev. 185, 992–994 (1969).
J. G. Aiken and A. G. Jordan, Electrical transport properties of single-crystal nickel oxide, Phys. Chem. Solids 29, 2153–2167 (1968).
C. M. Osburn and W. R. Vest, Defect structure and electrical properties of NiO: IL Temperatures below equilibrium, J. Phys. Chem. Solids 32, 1343–1354 (1971).
V. P. Zhuze and A. L Shelykh, Hall effect in nickel oxide, Soviet Phys.—Solid State 5, 1278–1280 (1963).
S. Koide, Electrical properties of LixNi(1-x) single crystals, J. Phys. Soc. Japan 20, 123–132 (1965).
S. P. Mitoff, Electrical conductivity and thermodynamic equilibrium in nickel oxide, J. Chem. Phys 35, 882–889 (1961).
I. Bransky and N. M. Tallan, High-temperature defect structure and electrical properties of NiO, J. Chem. Phys. 49, 1243–1249 (1968).
Ya. M. Ksendzov and L. A. Drabkin, Forbidden-band width of nickel monoxide, Soviet Phys.—Solid State 1, 1519–1520 (1965).
S. Pizzini and R. Morlotti, Thermodynamic and transport properties of stoichiometric and nonstoichiometric nickel oxide, J. Electrochem. Soc. 114, 1179–1189 (1967).
A. J. Springthorpe, I. G. Austin, and B. A. Austin, Hopping conduction in crystals at low temperatures. Solid State Commun. 3, 143–146 (1965).
Ya. M. Ksendzov, B. K. Avdeenko, and V. V. Marakov, Semiconductor properties of single crystals of nickel oxide, Soviet Phys.—Solid State 9, 828–834 (1967).
S. van Houten, Semiconduction in LixNi(1-x)O, J. Phys. Chem. Solids 17, 7–17 (1960).
I. G. Austin, A. J. Springthorpe, B. A. Smith, and C. E. Turner, Electronic transport phenomena in single-crystal NiO and CoO, Proc. Phys. Soc. (London) 90, 156–174 (1967).
A. J. Bosman, H. J. van Daal, and G. F. Knüvers, Hall effect between 3(X)K and 1000K in NiO, Phys. Lett. 19, 372–373 (1965).
H. J. van Daal and A. J. Bosman, Hall effect in CoO, NiO, and α-Fe2O3, Phys. Rev. 158, 736–747 (1967).
A. J. Bosman and C. Crevecoeur, Mechanism of the electrical conduction in Li-doped NiO, Phys. Rev. 144, 763–770 (1966).
W. E. Spear and D. S. Tannhauser, Hole transport in pure NiO crystals, Phys. Rev. B 7, 831–833 (1973).
L G. Austin and N. F. Mott, Polarons in crystalline and non-crystalline materials. Adv. Phys. 18, 41–102 (1969).
A. J. Bosman and H. J. van Daal, Small-polaron versus band conduction in some transition-metal oxides, Adv. Phys. 19, 1–117 (1970).
S. Kabashima and T. Kawakubo, High-frequency conductivity of NiO, J. Phys. Soc. Japan 24, 493–497 (1968).
T. M. Wilson, A study of the electronic structure of the first-row transition-metal compounds.Intern. J. Quant. Chem. IIIS, 757–774 (1970).
L. F. Mattheiss, Electronic structure of the 3d transition-metal. monoxides: L Energy-band results, Phys. Rev. B5, 290–306 (1972); IL Interpretation, Phys. Rev. B5, 306–315 (1972).
D. Reinen, Color and composition in inorganic solids: VIIB. Light absorption of divalent nickel in mixed crystals on Mg(1-x) NixO and in tetrahedral coordination, Ber. Bunsenges. Physik. Chem. 69, 82–87 (1965).
N. Kawai and S. Mochizuki, Insulator-metal transition in NiO, Solid State Commun. 9, 1393–1395 (1971).
G. K. Wertheim and S. Hufner, X-ray photoemission band structure of some transition-metal oxides, Phys. Rev. Lett. 28, 1028–1031 (1972).
D. E. Eastman, unpublished data (1973).
R. J. Powell and W. E. Spicer, Optical properties of NiO and CoO, Phys. Rev. B 2, 2182–2193 (1970).
D. Adler, Band structure of magnetic semiconductors, IBM J. Res. Develop. 14, 261–268 (1970).
R. Glosser and W. C. Walker, Electroreflectance observation of localized and itinerant electron states in NiO, Solid State Commun. 9, 1599–1602 (1971).
M. A. Kolber and R. K. MacCrone, Bound-polaron hopping in NiO, Phys. Rev. Lett. 29, 1457 (1972).
K. H. Johnson, R. P. Messmer, and J. W. D. Connolly, Localized electronic excitations in nickel oxide, Solid State Commun. 12, 313–316 (1973).
J. C. Slater and K. H. Johnson, Self-consistent-field Xα cluster method for polyatomic molecules and sohds, Phys. Rev. B 5, 844–853 (1972).
P. D. Dernier and M. Marezio, Crystal structure of the low-temperature antiferromagnetic phase of V2O3, Phys. Rev. B 2, 3771–3776 (1970).
J. Feinleib and W. Paul, Semiconductor-to-metal transition in V2O3, Phys. Rev. 155, 841–850 (1967).
R. M. Moon, Antiferromagnetism in V2O3, Phys. Rev. Lett. 25, 527–529 (1970).
A. S. Barker and J. P. Remeika, Optical properties of V2O3 doped with chromium. Solid State Commun. 8, 1521–1524 (1970).
M. S. Kozyreva, V. N. Novikov, and B. A. Tallerchik, Optical properties of V2O3 in the region of the phase transition, Soviet Phys.—Solid State 14, 639–643 (1972).
L G. Austin and C. E. Turner, The nature of the metallic state in V2O3 and related oxides, Phil. Mag. 19, 939–149 (1969).
A. Menth and J. P. Remeika, Magnetic properties of (V(1-x)Crx)2O3, Phys. Rev. B 2, 3756–3762 (1970).
D. Adler, J. Feinleib, H. Brooks, and W. Paul, Semiconductor-to-metal transitions in transitional-metal compounds, Phys. Rev. 155, 851–860 (1967).
D. B. McWhan and T. M. Rice, Critical pressure for the metal-semiconductor transition in V2O3, Phys. Rev. Lett. 22, 887–890 (1969).
D. B. McWhan, T. M. Rice, and J. P. Remeika, Mott transition in Cr-doped V2O3, Phys. Rev. Lett. 23, 1384–1387 (1969).
G. K. Wertheim, J. P. Remeika, H. J. Guggenheim, and D. N. E. Buchanan, Mossbauer effect study of metal-insulator transition in V2O3, Phys. Rev. Lett. 25, 94–96 (1970).
D. B. McWHian and J. P. Remeika, Metal-insulator transition in (V1-xCrx)2O3, Phys. Rev. B 2, 3734–3750 (1970).
T. M. Rice and D. B. McWhan, Metal-insulator transition in transition-metal oxides, IBM J. Res. Develop. 14, 251–257 (1970).
T. M. Rice, D. B. McWhan, and W. F. Brinkman, in Proc. Tenth Int. Conf. on the Physics of Semiconductors (S. P. Keller, J. C. Hensel, and F. Stem, eds.), pp. 293–300, USAEC Div. Tech. Inform., Oak Ridge, Tennessee (1970).
D. B. McWhan, T. M. Rice, and J. P. Remeika, in Proc. Int. Conf on the Physics of Solids under Pressure, Grenoble, France, 1979, pp. 149–156, Editions du CNRS, Paris (1970).
T. M. Rice and W. F. Brinkman, in Critical Phenomena in Alloys, Magnets, and Superconductors (R. E. Mills, E. Ascher, and R. I. Jaffee, eds.), pp. 593–612, McGraw-Hill, New York (1971).
D. B. McWhan, A. Menth, and J. P. Remeika, Metal-insulator transitions in transition-metal oxides, J. de Physique 32 (CI), 1079–1085 (1971).
D. B. McWhan, A. Menth, J. P. Remeika, W. F. Brinkman, and T. M. Rice, Metal-insulator transitions in pure and doped V2O3, Phys. Rev. B 7, 1920–1931 (1973).
A. F. Reid, T. M. Sabine, and D. A. Wheeler, Neutron diffraction and other studies of magnetic ordering in phases based on Cr2O3, V2O3, and Ti2O3, J. Solid State Chem. 4, 400–409 (1972).
C. Bonnelle, Contribution to the study of transition metals, Ann. Physique (Paris), 1, 439–481 (1966).
D. W. Fischer, Use of soft X-ray band spectra for determining molecular orbital structure: 1. Vanadium octahedral and tetrahedral sites, Appl. Spectry. 25, 263–270 (1971).
A. Gainotti, C. Ghezzi, and M. Manfredi, Semiconductor-to-metal transition and positron annihilation in V2O3, Nuovo Cimento, 62B, 121–129 (1969).
A. Greenberger and S. Berko, Angular distribution of 2γ from positron annihilation in V2O3, Bull Am. Phys. Soc. 17, 358 (1972).
T. N. Kennedy and J. D. Mackenzie, Suppression of the semiconductor-metal transition in vanadium oxides, J. Non-Crystall. Solids 1, 326–330 (1969).
A. Jayaraman, D. B. McWhan, J. P. Remeika, and P. D. Dernier, Critical behavior of the Mott transition in Cr-doped V2O3, Phys. Rev. B 2, 3751–3756 (1970).
V. P. Zhuze, A. A. Andreev, and A. I. Shelykh, The Hall effect in V2O3 single crystals in the metallic conductivity region, Soviet Phys.—Solid State 10, 2914–2916 (1969).
E. D. Jones, Temperature dependence of the vanadium NMR frequency shift in V2O3, J. Phys. Soc. Japan 27, 1692–1693 (1969).
H. Zeiger, Free-energy model of the high-temperature metal-insulator transition in Ti2O3 and V2O3, Bull. Am. Phys. Soc. 18, 399 (1973).
P. G. Dickens and M. S. Whittingham, The tungsten bronzes and related compounds, Quart. Rev. Chem. Soc. 22, 30–44 (1968).
A. Narath and D. C. Wallace, Nuclear magnetic resonance in cubic sodium tungsten bronzes, Phys. Rev. 127, 725–729 (1962).
W. R. Gardner and G. C. Danielson, Electrical resistivity and Hall coefficient of sodium tungsten bronze, Phys. Rev. 93, 36–51 (1954).
L. D. Muhlestein and G. C. Danielson, Seebeck effect in sodium tungsten bronze, Phys. Rev 160, 562–567 (1967).
M. J. Sienko and J. M. Berak, in The Chemistry of Extended Defects in Non-Metallic Solids (L. Eyring and M. O’Keeffe, eds.), pp. 541–554, American Elsevier, New York (1970).
J. M. Berak and M. J. Sienko, Effect of oxygen deficiency on electrical transport properties of tungsten trioxide crystals, J. Solid State Chem. 2, 109–133 (1970).
S. Tanasaki, On the phase transition of tungsten trioxide below room temperature, J. Phys. Soc. Japan 15, 566–573 (1960).
A. D. Wadsley, The crystal structure of Na (2-x) V6O15, Acta Cryst. 8, 695–701 (1955).
J. H. Perlstein and M. J. Sienko, Single-crystal studies of electrical conductivity, Seebeck effect, and Hall voltage in sodium vanadium bronze and a crystal-field model of electron transport, J. Chem. Phys. 48, 174–181 (1968).
J. Graham and A. D. Wadsley, The crystal structure of the blue potassium molybdenum bronze, K0.28MoO3, Acta Cryst. 20, 93–100 (1966).
G. H. Bouchard, J. Perlstein, and M. J. Sienko, Solid-state studies of potassium molybdenum bronzes. Inorganic Chem. 6, 1682–1685 (1967).
D. S. Perloff, M. Vlasse, and A. Wold, Anisotropic electrical behavior of the blue potassium molybdenum bronze, K0.30MoO3, J. Phys. Chem. Solids 30, 1071–1076 (1969).
W. Fogle and J. H. Perlstein, Semiconductor-to-metal transition in the blue potassium molybdenum bronze, K0.30MoO3; example of a possible excitonic insulator, Phys. Rev. B 6, 1402–1412 (1972).
S. Methfessel and D. C. Mattis, in Handbuch der Physik (S. Flügge, ed.). Vol. 18/1, pp. 387–562, Springer-Verlag, Berlin (1968).
M. W. Shafer, J. B. Torrance, and T. Penney, in Magnetism and Magnetic Materials —1971 (AIP Conf. Proc. No. 5; C. D. Graham and J. J. Rhyne, eds.), pp. 840–844, American Institute of Physics, New York (1972).
T. Penney, M. W. Shafer, and J. B. Torrance, Insulator-metal transition and long-range magnetic order in EuO, Phys. Rev. B 5, 3669–3674 (1972).
J. B. Torrance, M. W. Shafer, and T. R. McGuire, Bound magnetic polarons and the insulator-metal transition in EuO, Phys. Rev. Lett. 29, 1168–1171 (1972).
D. E. Eastman, F. Holtzberg, and S. Methfessel, Photoemission studies of the electronic structure of EuO, EuS, EuSe, and GdS, Phys. Rev. Lett. 23, 226–229 (1969).
T. Kasuya, s-f Exchange interactions and magnetic semiconductors. Grit. Rev. Solid State Sci. 3, 131–164 (1972).
S. J. Cho, Spin-polarized energy bands in Eu chalcogenides by the augmented-plane-wave method, Phys. Rev. B 1, 4589–4603 (1970).
M. R. Oliver, J. O. Dinamock, A. L. McWhorter, and T. B. Reed, Conductivity studies in europium oxide, Phys. Rev. B5, 1078–1098 (1972).
S. von Molnar and T. Kasuya, in Proc. Tenth Int. Conf. on the Physics of Semiconductors, Cambridge, Mass., 1970 (S. P. Keller, J. C. Hensel, and F. Stern, eds.), pp. 233–242, USAEC Div. Tech. Inf., Springfield, Virginia (1970).
S. C. Moss and D. Adler, Amorphous silicon and germanium revisited: I. Structural aspects, Comments on Solid State Physics 5, 47–55 (1973).
D. E. Polk, Structural model for amorphous sihcon and germanium, J. Non-Crystall. Solids 5, 365–376 (1971).
S. C. Moss and J. F. Graczyk, in Proc. Tenth Int. Conf on the Physics of Semiconductors, Cambridge, Mass., 1970 (S. P. Keller, J. C. Hensel, and F. Stern, eds.), pp. 658–662, USAEC Div. Tech. Inform., Oak Ridge, Tennessee (1970).
M. L. Rudee and A. Howie, The structure of amorphous Si and Ge, Phil. Mag. 25, 1001–1007 (1972).
M. H. Brodsky, R. S. Title, K. Weiser, and G. D. Pettit, Structural, optical, and electrical properties of amorphous silicoti films, Phys. Rev. B I, 2632–2641 (1970).
G. S. Cargill, Anisotropic microstructure in evaporated amorphous germanium films, Phys. Rev. Lett. 28, 1372–1375 (1972).
F. L. Galeener, Optical evidence for a network of cracklike voids in amorphous germanium, Phys. Rev. Lett. 27, 1716–1719 (1971).
J. J. Hauser, Anisotropic electrical properties of amorphous germanium, Phys. Rev. Lett. 29, 476–479 (1972).
D. Adler and S. C. Moss, Amorphous silicon and germanium revisited: II. Electronic structure and transport. Comments on Solid State Physics, 5, 63–72 (1973).
S. C. Moss, P. Flynn, and L. O. Bauer, Impurity effects on the structure of amorphous sihcon and germanium prepared in various ways, Phil. Mag. 27, 441–456 (1973).
D. T. Pierce and W. E. Spicer, Electronic structure of amorphous Si from photoemission and optical studies, Phys. Rev. B 5, 3017–3029 (1972).
J. Sauvage, C. J. Mogab, and D. Adler, Temperature-dependent tunnelling into amorphous siHcon, Phil. Mag 25, 1305–1312 (1972).
M. H. Brodsky, D. Kaplan, and J. F. Ziegler, in Proc. Eleventh Int. Conf on the Physics of Semiconductors, Warsaw, 1972, pp. 529–535, Polish Scientific Publishers, Warsaw (1972).
R. Grigorovici and A. Vancu, Optical constants of amorphous silicon films near the main absorption edge. Thin Solid Films 2, 105–110 (1968).
J. E. Fischer and T. M. Donovan, Optical and photoelectric properties of amorphous silicon, J. Non-Crystall. Solids 8–10, 202–208 (1972).
M. L. Theye, Influence of annealing on the optical properties of amorphous germanium films. Mat. Res. Bull. 6, 103–118 (1971).
R. C. Chittick, J. H. Alexander, and H. F. Sterling, The preparation and properties of amorphous silicon, J. Electrochem. Soc. 116, 77–81 (1969).
M. Morgan and P. A. Walley, Localized conduction processes in amorphous germanium, Phil. Mag. 23, 661–671 (1971).
J. Stuke, in Conduction in Low-Mobility Materials (N. Klein, D. S. Tannhauser, and M. Pollack, eds.), pp. 193–206, Taylor and Francis, London (1971).
A. Lewis, Evidence for the Mott model of hopping conduction in the anneal stable state of amorphous silicon, Phys. Rev. Lett. 29, 1555–1558 (1972); Erratum, Phys. Rev. Lett. 30, 1238 (1973).
A. H. Clark, Electrical and optical properties of amorphous germanium, Phys. Rev. 154, 750–757 (1967).
A. Nwachuku and M. Kuhn, Tunneling into amorphous germanium fihns, Appl. Phys. Lett. 12, 163–165 (1968).
H. Piller and S. A. Khan, in Proc. Tenth Int. Conf. on the Physics of Semiconductors, Cambridge, Mass., 1970 (S. P. Keller, J. C. Hensel, and F. Stern, eds.), pp. 662–666, USAEC Div. Tech. Inform., Oak Ridge, Tennessee (1970).
J. Stuke, Review of optical and electrical properties of amorphous semiconductors, J. Non-Crystall. Solids 4, 1–26 (1970).
R. Grigorovici, N. Croitoru, and A. Denvenyo, Thermoelectric power in amorphous germanium, Phys. Stat. Sol 16, K143-K145 (1966).
M. Pollack, M. L. Knotek, H. Kurtzman, and H. Glick, DC conductivity of amorphous germanium and the structure of the pseudogap, Phys. Rev. Lett. 30, 856–859 (1973).
M. L. Knotek, M. Pollack, T. M. Donovan, and H. Kurtzman, Thickness dependence of hopping transport in amorphous-germanium films, Phys. Rev. Lett. 30, 853–856 (1973).
W. Beyer and J. Stuke, Thermoelectric power of amorphous semiconductors, J. Non-Crystall. Solids 8–10 321–325 (1972).
M. H. Broksky and R. J. Gambino, Electrical conduction in evaporated amorphous silicon films, J. Non-Crystall. Solids 8–10, 739–744 (1972).
M. Zavetova, S. Koc, and J. Zemek, Steep vs. exponential absorption edge in amorphous germanium: evidence for the effect of oxygen, Czech. J. Phys. 22, 429–431 (1972).
H. R. Philipp, Optical and bonding model for non-crystalline SiOx and SiOxNy materials, J. Non-Crystall. Solids 8–10, 627–632 (1972).
A. J. Bennett and L. M. Roth, Calculation of the optical properties of amorphous SiOx materials, Phys. Rev. B 4, 2686–2696 (1971).
A. Mattheissen and C. Voigt, On the influence of temperature on the electrical conductivity of alloys, Ann. Physik Chemie (Leipzig) 122, 19–78 (1864).
F. Bloch, On the quantum mechanics of electrons in crystal lattices, Z. Physik 52, 555–600 (1928).
A. Sommerfeld and H. Bethe, Electron theory of metals, Handbuch der Physik 2412, 333–622 (1933).
J. Bardeen, Conductivity of monovalent metals, Phys. Rev 52, 688–697 (1937).
M. Bailyn, Transport in metals: IL Effect of the phonon spectrum and Umklapp processes at high and low temperatures, Phys. Rev. 120, 381–404 (1960).
J. E. Kunzler, in Ultra-High-Purity Metals, pp. 171–200, American Society for Metals, Metals Park, Ohio (1962).
G. J. van den Berg, Ph.D. Thesis, Univ. of Leiden, unpublished (1938).
G. K. White and S. B. Woods, Conductivity of a-manganese. Can. J. Phys. 35, 346–348 (1957).
P. G. deGennes and J. Friedel, Anomahes in the resistivity in certain magnetic metals, J. Phys. Chem. Solids 4, 71–77 (1958).
V. B. Zemov and Yu. V. Sharvin, Measurement of the resistance of high-purity tin at helium temperatures, Soviet Phys.—JETP 9, 737–741 (1959).
R. B. Dingle, The electrical conductivity of thin wires, Proc. Roy. Soc. (London) A201, 545–560 (1950).
J. L. Olsen, Electrical Transport in Metals, Interscience, New York (1962).
W. Meissner and B. Voigt, Measurements with the aid of liquid helium: XL Resistance of pure metals at low temperatures, Ann. Physik (Leipzig) 1, 761–797 (1930).
J. Kondo, Resistance minimum in dilute magnetic alloys, Progr. Theor. Phys. (Kyoto) 32, 37–49 (1964).
W. B. Pearson, Electron transport in copper and dilute alloys at low temperature: IV. Resistance minimum: temperature of occurrence as a function of solute concentration, Phil. Mag. 46, 920–923 (1955).
J. P. Franck, F. D. Manchester, and D. L. Martin, The specific heat of pure copper and of some dilute copper and iron alloys showing a minimum in the electrical resistance at low temperatures, Proc. Roy. Soc. (London) A263, 494–507 (1961).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1975 Bell Telephone Laboratories, Incorporated
About this chapter
Cite this chapter
Adler, D. (1975). The Imperfect Solid—Transport Properties. In: Hannay, N.B. (eds) Defects in Solids. Treatise on Solid State Chemistry. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-0829-4_4
Download citation
DOI: https://doi.org/10.1007/978-1-4684-0829-4_4
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-0831-7
Online ISBN: 978-1-4684-0829-4
eBook Packages: Springer Book Archive