Abstract
Silicon nitride has been explored in MNST to aid in the quantity and stability of the charge which forms at the interface and in the insulator or gate dielectric. Tombs et al. have described a planar silicon insulated-gate, field-effect transistor that utilizes silicon nitride as a diffusion mask, a passivating layer and as the gate insulator. They claim that use of this material in place of the conventional, thermally-grown silicon oxide has indicated improvements in the stability of the device, the dielectric strength of the gate, and the control of the surface state density. Amorphous silicon nitride films were utilized for the above device with a resistivity of 5 × 1014 ohm-cm at room temperature.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1972 IFI/Plenum Data Corporation
About this chapter
Cite this chapter
Milek, J.T. (1972). Miscellaneous Devices and Applications. In: Silicon Nitride for Microelectronic Applications. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-9609-7_9
Download citation
DOI: https://doi.org/10.1007/978-1-4615-9609-7_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4615-9611-0
Online ISBN: 978-1-4615-9609-7
eBook Packages: Springer Book Archive