Abstract
A great amount of interest has developed during the past five years in silicon nitride for the passivation and stabilization of semiconductor devices. This has resulted largely from the realization that silicon nitride serves as a barrier to the migration of charged ionic species, a major source of device instability. In addition, silicon nitride has a dielectric constant approximately twice that of silicon dioxide, very high dielectric strength, and can be prepared in such a way that pinhole densities are very low. Furthermore, silicon nitride passivation and metal oxide semiconductors are becoming increasingly intertwined because the nitride lowers the threshold voltage of MOS devices. Makers of bipolar integrated circuits favor the nitride principally for its protective properties.
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© 1972 IFI/Plenum Data Corporation
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Milek, J.T. (1972). Passivation. In: Silicon Nitride for Microelectronic Applications. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-9609-7_4
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DOI: https://doi.org/10.1007/978-1-4615-9609-7_4
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4615-9611-0
Online ISBN: 978-1-4615-9609-7
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