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Aluminum Antimonide

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III–V Semiconducting Compounds

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Aluminum Antimonide Bibliography

  • AGAEV, Ya., et al. Investigation of the Nernst-Ettingshausen Thermomagnetic Effects in Solid Solutions of the System Indium Antimonide-Aluminum Antimonide. SOVIET PHYS.-SOLID STATE, v. 3, no. 1, July 1961. p. 141–143.

    Google Scholar 

  • AGAEV, Ya. and A.R. MIKHAILOV. Some Electrical and Thermal Properties of Aluminum Antimonide Crystals. FIZ. SVOISTVA POLUPROV., 3-5–3-6, Mater. Vses. Konf., 1965. p. 312–318.

    Google Scholar 

  • ALLRED, W.P. et al. Zone Melting and Crystal Pulling Experiments with Aluminum Antimonide. ELECTROCHEM. SOC, J., v. 105, no. 2, Feb. 1958. p. 93–96. [A]

    Article  Google Scholar 

  • ALLRED, W.P. et al. The Preparation and Properties of Aluminum Antimonide. ELECTROCHEM. SOG., J., v. 107, no. 2, Feb. 1960. p. 117–122. [B]

    Article  Google Scholar 

  • ARLT, G. and P. QUADFLIEG. Piezoelectricity in III–V Compounds with a Phenomenological Analysis of the Piezoelectric Effect. PHYS. STATUS SOLIDI, v. 25, no. 1, Jan. 1968. p. 323–330.

    Article  Google Scholar 

  • BLAMIRES, N.G. and P.E. GIBBONS. Free Carrier Lifetime in High Resistivity Aluminum Antimonide. SOLID STATE COMMUNICATIONS, v. 5, no. 5, May 1967. p. 395–397.

    Article  Google Scholar 

  • BLUNT, R.F. et al. Electrical and Optical Properties of Intermetallic Compounds. III. Aluminum Antimonide. PHYS. REV., v. 196, no. 3, Nov. 1954. p. 578–580.

    Article  Google Scholar 

  • BOLEF, D.I. and M. MENES. Elastic Constants of Single Crystal Aluminum Antimonide. J. OF APPLIED PHYS., v. 31, no, 8, Aug. 1960. p. 1426–1427.

    Article  Google Scholar 

  • BRAUNSTEIN, R. and E.O. KANE. The Valence Band Structure of the III–V Compounds. PHYS. AND CHEM. OF SOLIDS, v. 23, no. 10, Oct. 1962. p. 1423–1431.

    Article  Google Scholar 

  • CARDONA, M. et al. Electroreflectance in Aluminum Antimonide. Observation of the Direct Band Edge. PHYS. REV., LETTERS, v. 16, no. 15, Apr. 1966. p. 644–646.

    Article  Google Scholar 

  • DONNAY, J.D.H. (Ed.) Crystal Data. Determinative Tables. 2nd Ed. American Crystallographic Association, Apr. 1963. ACA Monograph no. 5.

    Google Scholar 

  • FISCHER, T.E. Reflectivity, Photoelectric Emission and Work Function of Aluminum Antimonide. PHYS. REV., v. 139, no, 4A, Aug. 1965. p. A1228–A1233.

    Article  Google Scholar 

  • GHANEKAR, K.M. and R.J. SLADEK. Piezoresistance and Piezo-Hall Effects in n- and p-Type Aluminum Antimonide. PHYS. REV., v. 146, no. 2, June 1966. p. 505–512.

    Article  Google Scholar 

  • GIESECKE, G., and H. PFISTER. Precision Determination of the Lattice Constants of 3–5 Compounds. ACTA. CRYST., V. 11, 1958. p. 369–371.

    Article  Google Scholar 

  • GLAZOV, V.M. et al. Liquid Semiconductors. New York, Plenum Press, 1969. 362 p. [A]

    Google Scholar 

  • GLAZOV, V.M. et al. Thermal Expansion of Substrates Having a Diamond-Like Structure and the Volume Changes Accompanying Their Melting. RUSSIAN J. OF PHYS. CHEM., v. 43, no. 2, Feb. 1969. p. 201–205. [B]

    Google Scholar 

  • GORYUNOVA, N.A. The Chemistry of Diamond-Like Semiconductors. Ed. J.C. Anderson. Cambridge, Mass. The M.I.T. Press, Mass. Inst, of Tech., 1965. 236 p.

    Google Scholar 

  • HASS, M. and B.W. HENVIS. Infrared Lattice Reflection Spectra of III–V Compound Semiconductors. PHYS. AND CHEM. OF SOLIDS, v. 23, no. 8, Aug. 1962. p. 1099–1104.

    Article  Google Scholar 

  • HICKERNELL, F.S. The Electroacoustic Gain Interaction in III–V Compounds:Gallium Arsenide. IEEE TRANS. ON SONICS AND ULTRASONICS, v. SU-13, no. 2, July 1966. p. 73–77.

    Article  Google Scholar 

  • KOVER, F. Electrical Properties of Aluminum Antimonide (In Fr.). ACAD. DES SCI., C.R., v. 243, no. 7, Aug. 1956. p. 648–650.

    Google Scholar 

  • LAUDE, L.D. et al. Deformation Potentials of the Indirect and Direct Absorption Edges of Aluminum Antimonide. PHYS. REV., B, v. 1, no. 4, Feb. 1970. p. 1436–1442.

    Article  Google Scholar 

  • MINOMURA, S. and H.G. DRICKAMER. Pressure Induced Phase Transitions in Silicon, Germanium and Some III–V Compounds. J. OF PHYS. AND CHEM. OF SOLIDS, v. 23, May 1962. p. 451–456.

    Article  Google Scholar 

  • MOORADIAN, A. and G.B. WRIGHT. First Order Raman Effect in III–V Compounds. SOLID STATE COMMUNICATIONS, v. 4, no. 9, Sept. 1966. p. 431–434.

    Article  Google Scholar 

  • MOSS, T.S. et al. Infrared Faraday Effect Measurements on Gallium Phosphide and Aluminum Antimonide. In: INTERNAT. CONF. ON THE PHYS, OF SEMICONDUCTORS, PROC. Held at Exeter, July 1962. Ed. by, STICKLAND, A.C. London, Inst, of Phys. and the Phys. Soc., 1962. p. 295–300

    Google Scholar 

  • MUZHDABA, V.M. et al. Thermal Conductivity and Thermo-EMF of Aluminum Antimonide and Gallium Phosphide at Low Temperatures. SOVIET PHYS.-SOLID STATE, v. 10, no. 9, Mar. 1969. p. 2265–2266.

    Google Scholar 

  • NASELDOV, D.N. and S.V. SLOBODCHIKOV. Study of Electric and Thermoelectric Properties of Aluminum Antimonide. SOVIET PHYS.-TECH. PHYS., v. 3a, no, 4, Apr. 1958. p. 669–676.

    Google Scholar 

  • NOVIKOVA, S.I. and N. Kh. ABRIKOSOV. Thermal Expansion of Aluminum Antimonide, Gallium Antimonide, Zinc Telluride, and Mercury Telluride at Low Temperatures. SOVIET PHYS.-SOLID STATE, v. 5, no, 8, Feb. 1964, p, 1558–1559.

    Google Scholar 

  • OSWALD, R. and R. SCHADE. On the Determination of the Optical Constants of III–V Semiconductors in the Infrared (In Ger.). Z. FUER NATURFORSCH., v. 9a, no. 7/8, July/Aug. 1954. p. 611–617.

    Google Scholar 

  • PIESBERGEN, U. The Mean Atomic Heats of the III–V Semiconductors: Aluminum Antimonide, Gallium Arsenide, Indium Phosphide, Gallium Antimonide, Indium Arsenide, Indium Antimonide and the Element, Germanium between 12 and 273°K (In Ger.). Z. FUER NATURFORSCH., v. 18a, no. 2, Feb. 1963. p. 141–147.

    Google Scholar 

  • PILLER, H. and V.A. PATTON. Interband Faraday Effect in Aluminum Antimonide, Germanium and Gallium Antimonide. PHYS. REV., v. 129, no. 3, Feb. 1963. p. 1169–1173.

    Article  Google Scholar 

  • PINES, B. Ya. and E.F. CHARKOVSKII. An x-Ray Investigation of the Kinetics of Reactive Diffusion in the Aluminum Antimonide System. SOVIET PHYS.-SOLID STATE, v, 1, no, 6, Dec 1959. p. 864–869.

    Google Scholar 

  • REID, F.J. and R.K. WILLARDSON, Carrier Mobilities in Indium Phosphide, Gallium Arsenide, and Aluminum Antimonide. J. OF ELECTRONICS AND CONTROL, v. 5, no. 1, July 1958. p. 54–61.

    Article  Google Scholar 

  • ROWE, J.E. et al. Derivative Spectrum of Indirect Excitons in Aluminum Antimonide. SOLID STATE COMMUNICATIONS, v. 7, no. 4, Feb. 1969. p. 441–444,

    Article  Google Scholar 

  • ROTH, L.M. and P.N. ARGYRES. Magnetic Quantum Effects. SEMICONDUCTORS AND SEMIMETALS, Ed. by Willardson, R.K. and A.C. Beer. New York, Acad. Press, 1966. v. 1.

    Google Scholar 

  • SERAPHIN, B.O. and H.E. BENNETT. Optical Constants. SEMICONDUCTORS AND SEMIMETALS. Ed. by Willardson, R.K. and A.C. Beer. New York, Acad. Press, 1966. v. 3, p. 499–543.

    Google Scholar 

  • SHAW, D. and H.D. McKELL. Tantalum Doping and High Resistivity in Aluminum Antimonide. BRITISH J. OF APPLIED PHYS., v. 14, no. 5, May 1963. p. 295–300.

    Article  Google Scholar 

  • SHAW, D. et al. Zinc Diffusion in Aluminum Antimonide. PHYS. SOC., PROC, v. 80, July 1962. p. 167–173.

    Article  Google Scholar 

  • SHILEIKA, A. Yu. et al. Intrinsic Piezobirefringence of Aluminum Antimonide. SOLID STATE COMMUNICATIONS, v. 7, no. 16, Aug. 1969. p. 1113–1117.

    Article  Google Scholar 

  • STEIGMEIER, E.F. and I. KUDMAN. Thermal Conductivity of III–V Compounds at High Temperatures. PHYS. REV., v. 132, no. 2, Oct. 1963. p. 508–512.

    Article  Google Scholar 

  • STIRN, R.J. and W.M. BECKER. Galvanomagnetic Effects in p-Type Aluminum Antimonide. PHYS. REV., v. 148, no. 2, Aug. 1966. p. 907–919. [A]

    Article  Google Scholar 

  • STIRN, R.J. and W.M. BECKER. Weak-Field Magnetoresistance in n-Type Aluminum Antimonide. PHYS. REV., v. 141, no. 2, Jan. 1966. p. 621–628. [B]

    Article  Google Scholar 

  • TURNER, W.J. and W.E. REESE. Infrared Lattice Bands in Aluminum Antimonide. PHYS. REV., v. 127, no. 1, July 1962. p. 126–131.

    Article  Google Scholar 

  • WAGINI, H. Thermal Conductivity of Gallium Phosphide and Aluminum Antimonide (In Ger.). Z. FUER NATURFORSCH., v. 21a, no. 12, Dec. 1966. p. 2096–2099.

    Google Scholar 

  • WIEBER, R.H. et al. Diffusion of Copper into Aluminum Antimonide. J. OF APPLIED PHYS., v. 31, no. 3, Mar. 1960. p. 608.

    Article  Google Scholar 

  • WILLARDSON, R.K. et al. Electrical Properties of Semiconducting Aluminum Antimonide. ELECTROCHEM. SOC., J., v. 101, no. 7, July 1954. p. 354–358.

    Article  Google Scholar 

  • WITTIG, J. Superconductivity of Metallic Aluminum Antimonide. SCIENCE, v. 155, no. 3763, Feb. 1967. p. 686–686.

    Article  Google Scholar 

  • WOLFF, G.A. et al. Relationship of Hardness, Energy Gap and Melting Point of Diamond-Type and Related Structures. In: SEMICONDUCTORS AND PHOSPHORS, PROC, Internat. Colloquium 1956, Garmisch-Partenkirchen. Ed. by Schon, M. and H. Welker. N.Y., Intersci., 1958. p. 463–469.

    Google Scholar 

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  1. Electronic Properties Information Center, Hughes Aircraft Company, Culver City, California, USA

    M. Neuberger

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Neuberger, M. (1971). Aluminum Antimonide. In: III–V Semiconducting Compounds. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-9606-6_3

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  • DOI: https://doi.org/10.1007/978-1-4615-9606-6_3

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