Skip to main content
SpringerLink
Log in
SpringerLink
Log in

Indium Phosphide

  • Chapter
III–V Semiconducting Compounds

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Indium Phosphide Bibliography

  • ALIEV, S.A. et al. Thermal Conductivity and Thermoelectric Power of n-Type Indium Phosphide at Low Temperatures. SOVIET PHYS.-SOLID STATE, v. 7, no. 5, Nov. 1965. p. 1287–1288. [A]

    Google Scholar 

  • ALIEV, S.A. et al. Hall Effect and Magnetoresistance of n-Indium Phosphide Crystals at Low Temperatures. PHYSICA STATUS SOLIDI, v. 17, no. 1, 1966. p. 105–108. [B]

    Article  Google Scholar 

  • BUBE, R.H. and F. CARDON. Determination of Capture Cross Sections by Optical Quenching of Photoconductivity. J. OF APPLIED PHYS., v. 35, no. 9, Sept. 1964. p. 2712–2719.

    Article  Google Scholar 

  • BUSCH, G. and R. KERN. Magnetic Susceptibility of Silicon and Intermetallic Compounds (In Ger.). HELVETICA PHYSICA ACTA, v. 29, no. 3, June 1956. p. 189–191.

    Google Scholar 

  • CARDONA, M. Temperature Dependence of the Refractive Index and the Polarizability of Free Carriers in Some III–V Semiconductors. INTERNAT. CONF. ON SEMICONDUCTOR PHYS., PROC., Prague, 1960. N.Y. Academic Press, 1961. p. 388–394. [A]

    Google Scholar 

  • CARDONA, M. Optical Studies of the Band Structure in Indium Phosphide. J. OF APPLIED PHYS., v. 32, no. 5, May 1961. p. 958. [B]

    Article  Google Scholar 

  • CARDONA, M. Infrared Dielectric Constant and Ultraviolet Optical Properties of Solids with Diamond, Zincblende, Wurtzite, and Rocksalt Structure. J. OF APPLIED PHYS., v. 36, no. 7, July 1965. p. 2181–2186. [C]

    Article  Google Scholar 

  • CARDONA, M. et al. Electroreflectance at a Semiconductor-Electrolyte Interface. PHYS. REV., v. 154, no. 3, Feb. 1967. p. 696–720.

    Article  Google Scholar 

  • CHANG, L. and H.C. CASEY, Jr. Diffusion and Solubility of Zinc in Indium Phosphide. SOLID STATE ELECTRONICS, v. 7, no. 6, June 1964. p. 481–485.

    Article  Google Scholar 

  • CLARKE, R.C. et al. The Preparation of High Purity Epitaxial Indium Phosphide. SOLID STATE COMMUNICATIONS, v. 8, no. 14, July 1970. p. 1125–1128.

    Article  Google Scholar 

  • DONNAY, J.D.H. (Ed.) Crystal Data, Determinative Tables. 2nd Ed. American Crystallographic Association, Apr. 1963. ACA Monograph no. 5.

    Google Scholar 

  • DUMKE, W.P. et al. Intra and Interband Free-Carrier Absorption and the Fundamental Absorption Edge in n-Type Indium Phosphide. PHYS. REV., B, Ser. 3, v. 1, no. 12, June 1970. p. 4668–4673.

    Article  Google Scholar 

  • EDWARDS, A.L. and H.G. DRICKAMER. Effect of Pressure on the Absorption Edges of Some III–V, II–V and I–VII Compounds. PHYS. REV., v. 122, no. 4, May 1961. p. 1149–1157.

    Article  Google Scholar 

  • FISCHER, T.E. Photoelectric Emission and Work Function of Indium Phosphide. PHYS. REV., v. 142, no. 2, Feb. 1966. p. 519–523.

    Article  Google Scholar 

  • GALAVANOV, V.V. and N.V. SIUKAEV. On the Mechanism of Electron Scattering in Indium Phosphide. PHYSICA STATUS SOLIDI, v. 38, no. 2, 1970. p. 523–530.

    Article  Google Scholar 

  • GALAVANOV, V.V. et al. The Electrical Properties of p-Type Indium Phosphide. SOVIET PHYS.-SEMICONDUCTORS, v. 3, no. 1, July 1969. p. 94–95. [A]

    Google Scholar 

  • GALAVANOV, V.V. et al. Thermoelectric Power of p-Type Indium Phosphide. SOVIET PHYS.-SEMICONDUCTORS, v. 3, no. 9, Mar. 1970. p. 1159–1160. [B]

    Google Scholar 

  • GAVINI, A. and M. CARDONA. Modulated Piezoreflectance in Semiconductors. PHYS. REV., B, Ser. 3, v. 1, no. 2, Jan. 1970. p. 672–682.

    Article  Google Scholar 

  • GIESECKE, G. and H. PFISTER. Precision Determination of the Lattice Constant of III–V Compounds. ACTA CRYSTALLOGRAPHICA, v. 11, 1958. p. 369–371.

    Article  Google Scholar 

  • GLICKSMAN, M. and K. WEISER. Electrical Properties of p-Type Indium Phosphide. J. OF PHYS. AND CHEM. OF SOLIDS, v. 10, no. 4, Apr. 1959. p. 337–340. [A]

    Article  Google Scholar 

  • GLICKSMAN, M. and K. WEISER. Electron Mobility in Indium Phosphide. ELECTROCHEM. SOC., J., v. 105, no. 12, Dec. 1958. p. 728–731.

    Article  Google Scholar 

  • GOLDSTEIN, B. Diffusion of Cadmium and Zinc in Gallium Arsenide. PHYS. REV., v. 118, no. 4, May 1960. p. 1024–1027.

    Article  Google Scholar 

  • GORYUNOVA, N.A. The Chemistry of Diamond-Like Semiconductors. Ed. J.C. Anderson. Cambridge, Mass. The M.I.T. Press. Mass. Inst. of Tech., 1965. 236 p.

    Google Scholar 

  • HAGA, E. and H. KIMURA. Free-Carrier Infrared Absorption in III–V Semiconductors. III. Gallium Arsenide, Indium Phosphide, Gallium Phosphide and Gallium Antimonide. PHYS. SOC. OF JAPAN, J., v. 19, no. 5, May 1964. p. 658–669.

    Article  Google Scholar 

  • HARMAN, T.C. et al. Preparation and Some Characteristics of Single Crystal Indium Phosphide. ELECTROCHEM. SOC., J., v. 105, no. 12, Dec. 1958. p. 731–735.

    Article  Google Scholar 

  • HICKERNELL, F.S. The Electroacoustic Gain Interaction in III–V Compounds: Gallium Arsenide. IEEE TRANS. ON SONICS AND ULTRASONICS, v. SU-13, no. 2, July 1966. p. 73–77.

    Article  Google Scholar 

  • HICKERNELL, F.S. and W.R. GAYTON. Elastic Constants of Single Crystal Indium Phosphide. J. OF APPLIED PHYS., v. 37, no. 1, Jan. 1966. p. 462.

    Article  Google Scholar 

  • HILSUM, C. et al. The Optical Frequencies and Dielectric Constants of Indium Phosphide. SOLID STATE COMMUNICATIONS, v. 7, no. 15, Aug. 1969. p. 1057–1059.

    Article  Google Scholar 

  • JAMES, L.W. et al. Band Structure and High-Field Transport Properties of Indium Phosphide. PHYS. REV., B, Ser. 3, v. 1, no. 10, May 1970. p. 3998–4004.

    Article  Google Scholar 

  • JENNY, D.A. and J.J. WYSOCKI. Temperature Dependence and Lifetime in Semiconductor Junctions. J. OF APPLIED PHYS., v. 30, no. 11, Nov. 1959. p. 1692–1698.

    Article  Google Scholar 

  • KESAMANLY, F.P. et al. Nernst-Ettingshausen and Faraday Effects in Indium Phosphide. SOVIET PHYS.-SOLID STATE, v. 6, no. 1, July 1964. p. 109–113. [A]

    Google Scholar 

  • KESAMANLY, F.P. et al. Dependence of the Effective Mass of Electrons on Their Density in Indium Phosphide Crystals. SOVIET PHYS.-SEMICONDUCTORS, v. 2, no. 10, Apr. 1969. p. 1221–1224. [B]

    Google Scholar 

  • KOESTER, W. and W. ULRICH. Isomorphy in III–V Compounds (In Ger.). Z. FUER METALLKUNDE, v. 49, no. 7, July 1956. p. 365–367.

    Google Scholar 

  • KOVALEVSKAYA, G.G. et al. Some Electrical and Photoelectric Properties of Indium Phosphide Doped with Copper. SOVIET PHYS.-SOLID STATE, v. 8, no. 8, Feb. 1967. p. 1922–1925.

    Google Scholar 

  • KUDMAN, I. and E.F. STEIGMEIER. Thermal Conductivity and Seebeck Coefficient of Indium Phosphide. PHYS. REV., v. 133, no. gA, Mar. 1964. p. A1665–A1667.

    Article  Google Scholar 

  • LAUDE, L. et al. Preparation and Properties of Indium Phosphide Films, Prepared by Cathode Sputtering (In Fr.). ACAD. DES SCI., COMPTES RENDUS, v. 270, no. 4, Ser. B, Jan. 1970. p. 285–287.

    Google Scholar 

  • LORENZ, M.R. et al. Band Structure and Direct Transition Electroluminescence in the Indium Gallium Phosphide Alloys. APPLIED PHYS. LETTERS, v. 13, no. 12, Dec. 1968. p. 421–423.

    Article  Google Scholar 

  • MIKHAILOVA, M.P. et al. Photomagnetic Effect and Photoconductivity in Indium Phosphide. SOVIET PHYS.-SOLID STATE, v. 4, no. 5, Nov. 1962. p. 899–902.

    MathSciNet  Google Scholar 

  • MINOMURA, S. and H.G. DRICKAMER. Pressure Induced Phase Transitions in Silicon, Germanium and Some III–V Compounds. J. OF PHYS. AND CHEM. OF SOLIDS, v. 23, May 1962. p. 451–456.

    Article  Google Scholar 

  • MITRA, S.S. Phonon Assignments in Zinc Selenide and Gallium Antimonide and Some Regularities in the Phonon Frequencies of Zincblende-Type Semiconductors. PHYS. REV., v. 132, no. 3, Nov. 1963. p. 986–991.

    Article  Google Scholar 

  • MOORADIAN, A. and G.B. WRIGHT. First Order Raman Effect in III–V Compounds. SOLID STATE COMMUNICATIONS, v. 4, no. 9, Sept. 1966. p. 431–434.

    Article  Google Scholar 

  • MOSS, T.S. and A.K. WALTON. Measurement of Effective Mass of Electrons in Indium Phosphide by Infrared Faraday Effect. PHYSICA, v. 25, no. 11, Nov. 1959. p. 1142–1144.

    Article  Google Scholar 

  • NASLEDOV, D.N. et al. Electrical Properties of p-Type Indium Phosphide at Low Temperatures. SOVIET PHYS.-SEMICONDUCTORS, v. 3, no. 3, Sept. 1969. p. 387–389.

    Google Scholar 

  • OSWALD, F. On the Optical Properties of Indium Phosphide in the Infrared (In Ger.). Z. FUER NATURFORSCHUNG, v. 9a, no. 2, Feb. 1964. p. 181.

    MathSciNet  Google Scholar 

  • OSWALD, F. and R. SCHADE. On the Determination of the Optical Constants of Semiconductors of III–V Type, in the Infrared (In Ger.). Z. FUER NATURFORSCHUNG, v. 9a, no. 7/8, July/Aug. 1954. p. 611–617.

    Google Scholar 

  • PALIK, E.D. and R.F. WALLIS. Infrared Cyclotron Resonance in n-Type Indium Arsenide and Indium Phosphide. PHYS. REV., v. 123, no. 1, July 1961. p. 131–134.

    Article  Google Scholar 

  • PALIK, E.D. et al. Free Carrier Cyclotron Resonance, Faraday Rotation and Voigt Double Refraction in Compound Semiconductors. J. OF APPLIED PHYS., Supp. to v. 32, no. 10, Oct. 1961. p. 2132–2136.

    Article  Google Scholar 

  • PAUL, W. Band Structure of the Intermetallic Semiconductors from Pressure Experiments. J. OF APPLIED PHYS., Supp. to v. 32, no. 10, Oct. 1961. p. 2083–2094.

    Article  Google Scholar 

  • PETTIT, C.D. and W.J. TURNER. Refractive Index of Indium Phosphide. J. OF APPLIED PHYS., v. 36, no. 6, June 1965. p. 2081.

    Article  Google Scholar 

  • PIESBERGEN, U. The Mean Atomic Heats of the III–V Semiconductors, Aluminum Antimonide, Gallium Arsenide, Indium Phosphide, Gallium Antimonide, Indium Arsenide, Indium Antimonide and the Atomic Heats of the Element Germanium between 12 and 273°K (In Ger,). Z. FUER NATURFORSCHUNG, v. 18a, no. 2, Feb. 1963. p. 141–147.

    Google Scholar 

  • PITT, G.D. The Conduction Band Structure of Indium Phosphide from a High Pressure Experiment. SOLID STATE COMMUNICATIONS, v. 8, no. 14, July 1970. p. 1119–1123.

    Article  Google Scholar 

  • REID, F.J. and R.K. WILLARDSON. Carrier Mobilities in Indium Phosphide, Gallium Arsenide and Aluminum Antimonide. J. OF ELECTRONICS AND CONTROL, v. 5, no. 1, July 1958. p. 54–61.

    Article  Google Scholar 

  • REYNOLDS, W.N. et al. Some Properties of Semiconducting Indium Phosphide. PHYS. SOC., PROC., v. 71, pt. 3, Mar. 1958. p. 416–421.

    Article  Google Scholar 

  • ROTH, L.M. and P.N. ARGYRES. Magnetic Quantum Effects. SEMICONDUCTORS AND SEMIMETALS. Ed. WILLARDSON, R.K. and A.C. BEER. N.Y. Academic Press, 1966. v. 1, p. 165.

    Google Scholar 

  • SAGAR, A. Piezoresistance in n-Type Indium Phosphide. PHYS. REV., v. 117, no. 1, Jan. 1960. p. 101.

    Article  Google Scholar 

  • SERAPHIN, B.O. and H.E. BENNETT. Optical Constants. SEMICONDUCTORS AND SEMIMETALS. Ed. WILLARDSON, R.K. and A.C. BEER. N.Y. Academic Press. 1967. v. 3. p. 499–543.

    Google Scholar 

  • SHAKLEE, K.L. et al. Electroreflectance and Spin-Orbit Splitting in III–V Semiconductors. PHYS. REV. LETTERS, v. 16, no. 3, Jan. 1966. p. 48–50.

    Article  Google Scholar 

  • TIETJEN, J.J. et al. The Preparation and Properties of Vapor-Deposited Epitaxial Indium Arsenic Phosphide Using Arsine and Phosphine. ELECTROCHEM. SOC., J., v. 116, no. 4, Apr. 1969. p. 492–494.

    Article  Google Scholar 

  • TURNER, W.J. et al. Exciton Absorption and Emission in Indium Phosphide. PHYS. REV., v. 136, no. 5A, Nov. 1964. p. A1467–A1470.

    Article  Google Scholar 

  • VISHNUBHATLA, S.S. and J.C. WOOLLEY. Reflectance Spectra of Some III–V Compounds in the Vacuum Ultraviolet. CANADIAN J. OF PHYS., v. 46, no. 16, Aug. 1968. p. 1769–1774.

    Article  Google Scholar 

  • WEISER, K. et al. Indium Phosphide Laser Characteristics. AIME METALL. SOC., TRANS., v. 230, no. 2, Mar. 1964. p. 271–275.

    Google Scholar 

  • WELKER, H. and H. WEISS. III–V Compounds. SOLID STATE PHYSICS, Ed. SEITZ, F. and D. TURNBULL. N.Y. Academic Press, 1956. v. 3, p. 51.

    Google Scholar 

  • WOLFF, G.A. et al. Relationship of Hardness, Gnergy Gap and Melting Point of Diamond-Type and Related Structures. INTERNAT. COLLOQUIUM ON SEMICONDUCTORS AND PHOSPHORS, PROC., 1956, Garmisch-Partenkirchen. Ed. M. Schon and H. Welker. N.Y. Interscience, 1958. p. 463–469.

    Google Scholar 

  • HARVARD UNIV. DIV. OF ENG. AND APPLIED PHYS. The Effect of Pressure on Optical Properties of Semiconductors. By: ZALLEN, R. TR no. HP-12. Contract no. Nonr-1866-10. Aug. 1964. AD 607–047.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Electronic Properties Information Center, Hughes Aircraft Company, Culver City, California, USA

    M. Neuberger

Authors
  1. M. Neuberger
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 1971 IFI/Plenum Data Corporation

About this chapter

Cite this chapter

Neuberger, M. (1971). Indium Phosphide. In: III–V Semiconducting Compounds. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-9606-6_18

Download citation

  • DOI: https://doi.org/10.1007/978-1-4615-9606-6_18

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4615-9608-0

  • Online ISBN: 978-1-4615-9606-6

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation