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Growth of Pure Crystals of NiO and Measurement of their Drift Mobility

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Defects and Transport in Oxides

Part of the book series: Battelle Institute Materials Science Colloquia ((BIMSC))

Abstract

Very pure crystals of NiO were grown by an epitaxial process. The drift mobility of holes was measured in these crystals by the time-of-flight method. The drift mobility fits a large polaron model. A new analysis of the results gives fairly good agreement with polaron parameters previously calculated by Bosman and van Daal.

Partially supported by the Volkswagen Foundation.

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References

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Author information

Authors and Affiliations

  1. Department of Physics, Technion — Israel Institute of Technology, Haifa, Israel

    D. S. Tannhauser

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  1. D. S. Tannhauser
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Editors and Affiliations

  1. Materials Science Department, Battelle Memorial Institute, Columbus Laboratories, USA

    Martin S. Seltzer  & Robert I. Jaffee  & 

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© 1974 Springer Science+Business Media New York

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Tannhauser, D.S. (1974). Growth of Pure Crystals of NiO and Measurement of their Drift Mobility. In: Seltzer, M.S., Jaffee, R.I. (eds) Defects and Transport in Oxides. Battelle Institute Materials Science Colloquia. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8723-1_17

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  • DOI: https://doi.org/10.1007/978-1-4615-8723-1_17

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4615-8725-5

  • Online ISBN: 978-1-4615-8723-1

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