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Domain Luminescence of Zinc Sulfide

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Exciton and Domain Luminescence of Semiconductors / Eksitonnaya i Domennaya Lyuminestsentsiya Poluprovodnikov / Экситонная И Доменная Люминесценция Полупроводников

Part of the book series: The Lebedev Physics Institute Series ((LPIS))

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Abstract

There is great interest at the present time in semiconducting materials with a wide forbidden band. Such materials find important applications in the construction of active and passive circuit elements capable of operating at high temperatures over a wide range of voltages and, especially, in the construction of sources and receivers of short-wavelength light. There is particular interest in sources in which electrical energy is converted directly into light as a result of luminescence.

Homogeneous single crystals of ZnS are found to exhibit low-inertia low-voltage prebreakdown electroluminescence (including UV electroluminescence) at voltages corresponding to a mean field in the crystal of 103 V/cm. A negative differential conductivity effect accompanied by acoustoelectrical instability and domain formation is observed. The electroluminescence and the instability are shown to be related. The electroluminescence is due to the concentration of the electric field in the domain up to a value sufficient to excite electroluminescence by electrical breakdown processes.

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Literature Cited

  1. M. Cardona and G. Harbeke, Phys. Rev., A137:1467 (1965).

    Article  ADS  Google Scholar 

  2. Yu. V. Bochkov and A. N. Georgobiani, Tr. FIAN, 50:60 (1970).

    Google Scholar 

  3. A. N. Georgobiani and V. I. Steblin, Tr. FIAN, 50:27 (1970).

    Google Scholar 

  4. A. N. Georgobiani, M. B. Kotljarevsky, V. N. Zlobin, P. A. Todua, Yu. P. Generalov, and B. P. Dementev, Mater. Res. Bull., 8:893 (1973).

    Article  Google Scholar 

  5. G. S. Pekar’, N. B. Luk’yanchikova, Hoang MiShin, and M. K. Sheinkman, Pis’ma Zh. Éksp. Teor. Fiz., 19:513 (1974).

    Google Scholar 

  6. A. N. Georgobiani, Usp. Fiz. Nauk, 113:129 (1974).

    Article  Google Scholar 

  7. A. N. Georgobiani and P. A. Todua, Kratk. Soobshch. Fiz., No. 5, p. 26 (1970).

    Google Scholar 

  8. V. A. Chuenkov, Fiz. Tverd. Tela, 2:200 (1959).

    Google Scholar 

  9. V. A. Chuenkov, Izv. AN SSSR, Ser. Fiz., 20:1550 (1956).

    Google Scholar 

  10. V. Frantz, Dielectric Breakdown [Russian translation], IL, Moscow (1961).

    Google Scholar 

  11. L. V. Keldysh, Zh. Éksp. Teor. Fiz., 37:713 (1959).

    Google Scholar 

  12. H. Watanabe, Jpn. J. Appl. Phys., 5:12 (1966).

    Article  ADS  Google Scholar 

  13. H. Lozikowski, Czech. J. Phys., B13:164 (1963).

    Article  ADS  Google Scholar 

  14. V. A. Chapnin, Candidate’s Dissertation, Physics Institute, Academy of Sciences of the USSR (1969).

    Google Scholar 

  15. H. Watanabe, T. Chikamura, and M. Wada, Jpn. J. Appl. Phys., 13:357 (1974).

    Article  ADS  Google Scholar 

  16. N. G. Basov, O. V. Bogdankevich, and A. G. Devyatkov, Zh. Éksp. Teor. Fiz., 47:1588 (1964).

    Google Scholar 

  17. V. S. Vavilov, É. L. Nolle, and V. D. Egorov, Fiz. Tverd. Tela, 7:749 (1965).

    Google Scholar 

  18. É. L. Nolle, V. S. Vavilov, G. P. Golubev, and V. S. Mashtakov, Fiz. Tverd. Tela, 8:286 (1966).

    Google Scholar 

  19. C. E. Hurwitz, Appl. Phys. Lett., 9:116 (1966).

    Article  ADS  Google Scholar 

  20. O. V. Bogdankevich, M. M. Zverev, A. I. Krasilnikov, and A. N. Pechenov, Phys. Status Solidi, 19:K5 (1967).

    Article  ADS  Google Scholar 

  21. J. Bille, B. M. Kramer, P. Reimers, W. Ruppel, and R. Stille, Phys. Status Solidi, 36:K71 (1969).

    Article  ADS  Google Scholar 

  22. O. V. Bogdankevich, N, A. Borisov, A. N. Georgobiani, V. B. Gutan, B. M. Lavrushin, O. V. Matveev, E. I. Panasyuk, V. F. Pevtsov, and N. L. Poletaev, Kvant. Élektron., 2:2231 (1975).

    Google Scholar 

  23. Yu. P. Chukova, Tr. FIAN, 37:149 (1966).

    Google Scholar 

  24. V. L. Boneh-Bruevich, I. P. Zvyagin, and A. G. Mironov, Domain Electrical Instability in Semiconductors [in Russian], Izd. Nauka, Moscow (1972).

    Google Scholar 

  25. B. K. Ridley, Proc. Phys. Soc., 82:954 (1963).

    Article  ADS  Google Scholar 

  26. B. K. Ridley and T. B. Watkins, Proc. Phys. Soc., 78:293 (1961).

    Article  ADS  Google Scholar 

  27. J. B. Gunn, IBM J. Res. Dev., 8:141 (1964).

    Article  Google Scholar 

  28. Yu. N. Berozashvili, Candidate’s Dissertation, Physics Institute, Academy of Sciences of the USSR (1967).

    Google Scholar 

  29. I. Yamashita, I. Ishiguro, and T. Tanaka, Jpn. J. Appl. Phys., 4:470 (1965).

    Article  ADS  Google Scholar 

  30. N. G. Zhdanova, M. S. Kagan, and S. G. Kalashnikov, Fiz. Tverd. Tela, 8:788 (1966).

    Google Scholar 

  31. A. G. Foyt, R. E. Halsted, and W. Paul, Phys. Rev. Lett., 16:55 (1966).

    Article  ADS  Google Scholar 

  32. A. R. Hutson, J. H. McFee, and D. L. White, Phys. Rev. Lett., 7:237 (1961).

    Article  ADS  Google Scholar 

  33. M. E. Gertsenshtein and V. I. Pustovoit, Radiotekh. Élektron., 7:1009 (1962).

    Google Scholar 

  34. V. I. Pustovoit, Usp. Fiz. Nauk, 97:257 (1969).

    Google Scholar 

  35. N. G. Zhdanova, M. S. Kagan, and S. G. Kalashnikov, Fiz. Tverd. Tela, 8:744 (1966).

    Google Scholar 

  36. V. L. Bonch-Bruevich, Fiz. Tverd. Tela, 6:2041 (1964).

    Google Scholar 

  37. V. I. Pustovoit, S. G. Kalashnikov, and G. S. Pado, Fiz. Tekh. Poluprovodn., 3:832 (1969).

    Google Scholar 

  38. Sinclair S. Yee, Appl. Phys. Lett., 9:10 (1966).

    Article  ADS  Google Scholar 

  39. L. A. Sorokina, Candidate’s Dissertation, Physics Institute, Academy of Sciences of the USSR (1966).

    Google Scholar 

  40. R. W. Smith, Phys. Rev. Lett., 9:87 (1962).

    Article  ADS  Google Scholar 

  41. Physical Acoustics. Vol. 4A: Applications to Quantum and Solid State Physics, W. P. Mason, ed., Academic Press, New York (1966).

    Google Scholar 

  42. A. R. Moore, Phys. Rev. Lett., 12:47 (1964).

    Article  ADS  Google Scholar 

  43. C. Fischler-Hazoni and F. Williams, Phys. Rev., 139:A583 (1965).

    Article  ADS  Google Scholar 

  44. M. Aven and C. A. Mead, Appl. Phys. Lett., 7:8 (1965).

    Article  ADS  Google Scholar 

  45. D. Berlincourt, H. Jaffe, and L. R. Shiozava, Phys. Rev., 129:1009 (1963).

    Article  ADS  Google Scholar 

  46. W. E. Spear and P. G. Le Comber, Phys. Rev. Lett., 13:434 (1964).

    Article  ADS  Google Scholar 

  47. A. Sadhu and K. C. Kao, Solid State Commun., 8:2013 (1970).

    Article  ADS  Google Scholar 

  48. W. J. Fleming and J. E. Rowe, J. Appl. Phys., 42:2041 (1971).

    Article  ADS  Google Scholar 

  49. A. N. Georgobiani, A. I. Blazhevich, Yu. V. Ozerov, E. I. Panasyuk, P. A. Todua, and H. Friedrich, Izv. Akad. Nauk SSSR, Ser. Fiz., 37:415 (1973).

    Google Scholar 

  50. A. N. Georgobiani, A. I. Blazhevich, H. Friedrich, Yu. V. Ozerov, E. I. Panasyuk, and P. A. Todua, Luminescence of Crystals, Molecules, and Solutions, F. Williams, ed., Plenum Press, New York (1973), p. 239.

    Chapter  Google Scholar 

  51. F. Matossi, K. Lentwein, and G. Schmidt, Z. Naturforsch., 21a:461 (1966).

    ADS  Google Scholar 

  52. Physics and Chemistry of II–IV Compounds [Russian translation], Izd. Mir, Moscow (1970).

    Google Scholar 

  53. A. N. Georgobiani and P. A. Todua, J. Lumin., 5:14 (1972).

    Article  Google Scholar 

  54. A. N. Georgobiani and P. A. Todua, Kratk. Soobshch. Fiz., No. 6, p. 28 (1971).

    Google Scholar 

  55. A. N. Georgobiani, Tr. FIAN, 23:3 (1963).

    Google Scholar 

  56. I. K. Vereshchagin, Electroluminescence of Crystals [in Russian], Izd. Nauka, Moscow (1974).

    Google Scholar 

  57. V. E. Oranovskii, Izv. Akad. Nauk SSSR, Ser. Fiz., 25:516 (1961).

    Google Scholar 

  58. S. S. Yee, Solid State Electron., 10:1015 (1967).

    Article  ADS  Google Scholar 

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Authors
  1. A. N. Georgobiani
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  2. P. A. Todua
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Editors and Affiliations

  1. P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, USSR

    N. G. Basov

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Georgobiani, A.N., Todua, P.A. (1979). Domain Luminescence of Zinc Sulfide. In: Basov, N.G. (eds) Exciton and Domain Luminescence of Semiconductors / Eksitonnaya i Domennaya Lyuminestsentsiya Poluprovodnikov / Экситонная И Доменная Люминесценция Полупроводников . The Lebedev Physics Institute Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8573-2_2

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  • DOI: https://doi.org/10.1007/978-1-4615-8573-2_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4615-8575-6

  • Online ISBN: 978-1-4615-8573-2

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