Abstract
A departure from the periodicity of the crystal lattice (i.e., the presence of defects) in silicon, can, as in other semiconducting crystals, result in considerable changes in its electrical and optical properties (the electrical conductivity, the transparency, etc.). The properties of a semiconducting crystal are usually altered by the introduction of impurity atoms of certain substances into the lattice of the crystal, i.e., by doping. The irradiation of semiconducting crystals with high-energy particles (neutrons, deuterons, etc.) produces various types of radiation defect which can also alter the properties of the crystals. Knowing the actual effect of radiation on a semiconducting crystal and carrying out the irradiation under controlled conditions (temperature, dose), we can alter the properties of the crystal in a required manner. It follows that investigations of the effect of high-energy radiations on semiconducting crystals are of great interest. They are also of importance in relation to the use of semiconducting devices in situations where they are subjected to radiation or where they are used directly as radiation detectors.
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Lotkova, É.N. (1968). Investigation of the Infrared Absorption Spectrum of Neutron-Irradiated Silicon. In: Skobel’tsyn, D.V. (eds) Electrical and Optical Properties of Semiconductors. The Lebedev Physics Institute Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8552-7_3
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DOI: https://doi.org/10.1007/978-1-4615-8552-7_3
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