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Radiative Recombination at Dislocations in Germanium

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Electrical and Optical Properties of Semiconductors

Part of the book series: The Lebedev Physics Institute Series ((LPIS))

Abstract

Interest in radiative recombination in semiconductors has grown considerably in recent years. This is due not only to the practical applications of this phenomenon, such as lasers and semiconductor sources of incoherent radiation [1, 2], but also due to the fact that investigations of recombination radiation yield important information on the properties of semiconducting materials.

Thesis for the degree of Candidate of Physico-Mathematical Sciences. Defended at the P. N. Lebedev Physics Institute on March 9, 1964.

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Authors
  1. A. A. Gippius
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Editors and Affiliations

  1. P. N. Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, Russia

    D. V. Skobel’tsyn (Academician, Director) (Academician, Director)

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© 1968 Consultants Bureau

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Gippius, A.A. (1968). Radiative Recombination at Dislocations in Germanium. In: Skobel’tsyn, D.V. (eds) Electrical and Optical Properties of Semiconductors. The Lebedev Physics Institute Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8552-7_1

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  • DOI: https://doi.org/10.1007/978-1-4615-8552-7_1

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4615-8554-1

  • Online ISBN: 978-1-4615-8552-7

  • eBook Packages: Springer Book Archive

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