Abstract
Presented are Raman observations (see Fig. 1) of the interference between forbidden LO phonon scattering (discrete) and a broad emission which occurs when the incident photon energy ħωi is nearly resonant with the E1 or E1 + ∆1 gaps of InSb and GaSb. While the resonance enhancement of the forbidden LO phonons (with energy ħωLO and wavevector q) induced by the Fröhlich mechanism1 is well documented, 2,3 the physical mechanism causing the broad emission which can interfere with the phonon Raman process is less understood.
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References
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© 1979 Plenum Press, New York
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Dornhaus, R., Farrow, R.L., Chang, R.K., Martin, R.M. (1979). Interaction between Localized Carriers in the Accumulation Layer and Extended Bulk LO Phonons in InSb and GaSb: Raman Interference Lineshapes. In: Birman, J.L., Cummins, H.Z., Rebane, K.K. (eds) Light Scattering in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7350-0_30
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DOI: https://doi.org/10.1007/978-1-4615-7350-0_30
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