Abstract
The applicability of transient grating techniques for the study of nonequilibrium carrier diffusion and drift features has been considered. An experimental set-up for the investigation of hot carrier diffusion has been constructed. It combines the advantages of electron heating by an external electric field and those of diffusion-sensitive decay of the laser-induced free-carrier grating. Field dependences of hot carrier ambipolar diffusion coefficients have been determined in Si and GaAs.
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© 1988 Plenum Press, New York
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Vaitkus, J., Subačius, L., Jarašiūnas, K. (1988). Study of Hot Carrier Diffusion in Semiconductors by Transient Grating Techniques. In: Birman, J.L., Cummins, H.Z., Kaplyanskii, A.A. (eds) Laser Optics of Condensed Matter. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7341-8_54
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DOI: https://doi.org/10.1007/978-1-4615-7341-8_54
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