Abstract
Semiconductor solid solutions are good model substances for the study of electronic spectra and energy migration processes in weakly disordered solids. Random distribution of different atomic species over the regular crystal sites leads to the tailing of otherwise sharp energy band edges which in turn favours the localization of excitons or carriers. In this work we discuss the results of an experimental study of localized excitons in CdS1-xSex and ZnSe1-xTex solid solutions with substitution in the anion sub-lattice by selective excitation with monochromatic light.
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© 1988 Plenum Press, New York
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Permogorov, S., Reznitsky, A. (1988). Study of Localized Excitons in Semiconductor Solid Solutions by Selective Excitation. In: Birman, J.L., Cummins, H.Z., Kaplyanskii, A.A. (eds) Laser Optics of Condensed Matter. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7341-8_44
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DOI: https://doi.org/10.1007/978-1-4615-7341-8_44
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