Abstract
The role of substrate surface defects in the nucleation of whiskers in the process of vapor deposition is a topic of long standing in the literature. In fact, the beginning was the diffusion-dislocation model of Sears [1] which was an attempt to relate the nucleation and one-dimensional growth of whiskers to the non-disappearing step created by a screw dislocation on a substrate surface. For some time this model was widely accepted because of a number of experimental data which supported the presence of defects in whiskers either directly or indirectly. However, the model had weaknesses which until recently had to be tolerated. The inconsistency of this model was demonstrated by Wagner [2] who substituted the diffusion- dislocation model by the diffusion-droplet model based on the vapor-liquid-solid (VLS) mechanism of whisker growth [3]. Wagner pointed to a good deal of conclusive evidence supporting the VLS mechanism. Many other facts could be mentioned, all pointing to the important role played by impurities in the nucleation of whiskers. Thus, in the reduction of iron halides the iron whiskers grow on magnesium segregations [4]. Selective nucleation of whiskers of iron oxides was observed on the surface of Armco iron doped by bismuth deposited through a mask [5]; the whiskers nucleated and grew in druses only at the impurity sites. The VLS growth of copper whiskers (reduction of halides by hydrogen), with drops of molten salt at the whisker tip, has been observed directly by in situ electron microscopy [6].
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Literature Cited
G. W. Sears. Mercury whiskers. Acta Met., 1, 457–459 (1953).
E. I. Givargizov. Vapor Growth of Whiskers and Platelets. Nauka, Moscow (in Russian) (1977).
R. Wagner. Vapor-Liquid-Solid mechanism of crystal growth. In: Whisker Technology, ed. A. P. Levitt. Wiley, New York, 147–219 (1970).
J. V. Laukonis. The influence of impurities on the nucleation and growth of iron whiskers. Met. Sei. Rev. Met., 62, 179–186 (1965).
R. F. W. Pease, and R. A. Plok. Growth of FeO whiskers. Trans. Met. Soc. AIME, 233, 1949–1954 (1965).
O. Nittono, H. Hasegawa, and S. Nagakura. Growth mechanism of copper whiskers. J. Cryst. Growth, 42, 175–182 (1977).
A. Oberlin and M. Endo. Filamentary growth of carbon by benzene decomposition. J. Cryst. Growth, 32, 335–349 (1976).
S. Kittaka and K. Kishi. Growth of Cu whiskers from cupric oxide. Jap. J. Appl. Phys., 4, 661–666 (1965).
S. Kittaka and T. Koneko. Growth of a large number of iron whiskers by the reduction of halides. Jap. J. Appl. Phys., 8, 860–869 (1969).
W. W. Webb. Dislocation mechanisms in the growth of palladium whisker crystals. J. Appl. Phys., 36, 214–221 (1965).
D. A. Frank-Kamenetsky. Diffusion and Heat Transfer in Chemical Kinetics. Nauka, Moscow (in Russian) (1967).
F. Okuyama. Vapor-growth of tungsten whiskers. J. Appl. Phys., 45, 4239–4241 (1974).
E. Schonherr. Photographic observation of the growth of GaP-needles. J. Cryst. Growth, 9, 346–350 (1971).
A. A. Nosov, T. A. Poshekhonova, and P. V. Poshekhonov. Mechanism of gold whiskers growth. Radiotekhnika i Elektronika, 18, 1993–1994 (in Russian) (1973).
V. A. Shmelev. Diamond whiskers, Khimiya i Zhlzn’, 5, 15 (in Russian) (1976).
S. Simov, V. Gantcheva, and P. Kamadjiev. Study of the morphology of CdTe whiskers by scanning electron microscope. J. Cryst. Growth, 32, 133–136 (1976).
S. Motojima, T. Wakamatsu, Y. Takahashi, and K. Sugiyama. Crystal growth and some properties of titanium monophosphide. J. Electrochem. Soc., 123, 290–295 (1976).
S. A. Ammer and V. S. Postnikov. Whiskers. Voronezh Polytechnical Inst, Publ. House, Voronezh (1974).
V. N. Yerofeyev, V. I. Nikitenko, V. P. Polovinkina, and E. V. Suvorov. Specific features of X-ray diffraction contrast and geometry of slip of dislocation half-loops in silicon. Kristallografiya, 16, 190–196 (1971).
V. N. Rozhansky, S. Z. Bokshtein, T. N. Bulygina, M. P. Nazarova, and L L. Svetlov. Investigation of dislocation microplasticity in sapphire crystals by etching and electron microscopy. In: Whiskers and Nonferromagnetic Films. Voronezh Polytechnical Inst. Publishing House, Voronezh, part 1, 122–129 (1970).
S. Mendelson. Growth pips and whiskers in epitaxially grown silicon. J. Appl. Phys., 36, 2525–2534 (1965).
N. Holonyak, D. C. Jillson, and S. F. Bevacqua. Silicon, arsenic, whiskers, and tunnel diodes. In: Metallurgy of Elemental and Compound Semiconductors. New York- London 81–92 (1961).
J. Hirth and G. Pound. Condensation and Evaporation. Nucleation and Growth Kinetics. Pergamon Press (1963).
E. Kaldis. Principles of vapor growth of single crystals. In: Crystal Growth. Theory and Techniques. Vol. 1, ed. C. H. L. Goodman, Plenum Press, 49–191 (1974).
A. A. Chernov. Statistical kinetics of crystallization. Vestnik AN SSSR, No. 11, 60–67 (1968).
D. Turnbull. Phase changes. Solid State Phys., 3, 225–232 (1956).
B. V. Derjaguin. Film Growth. Dokl. AN SSSR, 51, 357–361.
V. F. Dorfman. Vapor Deposition Micrometallurgy of semiconductors. Metallurgy, Moscow, (1974).
N. A. Kolobov and M. M. Samokhvalov. Diffusion and Oxidation of Semiconductors. Metallurgy, Moscow (1975).
J. J. Pankove. The effect of impurities on the growth of crystals. J. Appl. Phys., 28, 1054–1059 (1957).
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Ammer, S.A., Tatarenkov, A.F. (1986). Role of Defects in the Nucleation of Whiskers Growing from Vapor. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7119-3_8
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DOI: https://doi.org/10.1007/978-1-4615-7119-3_8
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