Abstract
The possibility of using protective silicon dioxide masks for the localization of growth in the epitaxial deposition of semiconductor materials was established at the beginning of the 60’s [1, 2], Many publications have been devoted since then to the study and development of planar selective epitaxy, a process in which the holes etched through windows in the protective mask are filled in a controlled manner by the epitaxially deposited material. Practical cases of great interest are planar local epitaxial structures in which the surface of the grown layer coincides (is coplanar) with the surface of the original substrate. It has been shown [3–7] that considerable difficulties have to be overcome to achieve coplanarity in the desired structures. The holes may be filled both by upward growth from the bottom (normal growth) and via growth starting from the side walls of the holes (tangential growth); consequently, a specific ratio of the normal and tangential growth rates must be maintained to achieve coplanarity.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Literature Cited
B. D. Joyce and I. A. Baldrey. Selective epitaxial deposition of silicon. Nature, 195, 485–486 (1962).
M. Takabayashi. Epitaxial vapor growth of single crystal Ge. Jap. J. Appl. Phys., 1, 22–24 (1962).
O. S. Bulatov, A. V. Cherepovskaya, and Yu. D. Chistyakov. Mechanism of growth filling of faceted holes in selective epitaxy of gallium arsenide. Elektronnaya Tekhnika. Ser. 3. Mikroelektronika, No. 5(45), 83–92 (in Russian) (1973).
E. Mehal. Compound semiconductors for integrated circuitry. Trans. Met. Soc. AIME, 242, 452–462 (1968).
Y. Isibashi and M. Yamaguchi. Anisotropy in etching and deposition of selective epitaxial growth of GaAs. Jap. J. Appl. Phys., 9, 1007–1008 (1970).
S. Iida and K. Ito. Morphological studies on selective growth of GaAs. J. Cryst. Growth, 13/14, 336–341 (1972).
D. W. Shaw, R. W. Conrad, E. W. Mehal, and O. W. Wilson. Gallium arsenide epitaxial technology. In: Proc. Intern. Sympos. on gallium arsenide, Reading (1966) London, 10–15 (1967).
Pat. 4325879 (USA). Method of making shaped epitaxial deposits/D. W. Shaw. Feb. 04. 148–175 (1969).
L. G. Lavrentyeva, V. D. Dedkov, N. N. Bakin, and V. A. Yermolayev. Growth rate of epitaxial gallium arsenide layers on different crystallographic planes. In: Gallium Arsenide. Tomsk University Publishing House, Tomsk, No. 2, 186–188 (in Russian) (1969).
L. G. Lavrentyeva and M. P. Yakubenya. Epitaxial gallium arsenide. 1. Anisotropy of growth rate. In: Gallium Arsenide, Tomsk University Publishing House, No. 2, 40–45 (in Russian) (1969).
D. W. Shaw. Influence of substrate temperature on GaAs epitaxial deposition rates. J. Electrochem. Soc., 115, 405–408 (1968).
D. W. Shaw. Selective epitaxial deposition of GaAs in holes. J. Electrochem. Soc., 113, 904–908 (1966).
D. W. Shaw. Effect of vapor composition on the growth rates of faceted GaAs hole deposits. J. Electrochem. Soc., 115, 777–780 (1968).
R. Cox and E. W. Mehal. Planar Gunn oscillator for microwave. Trans. Met. Soc. AIME, 242, 461–464 (1968).
O. S. Bulatov, A. V. Cherepovskaya, and Yu. D. Chistyakov. Selective epitaxy of gallium arsenide in substrate holes. Mikroelektronika, 2, 180–183 (in Russian) (1973).
N. N. Bakin. Selective epitaxial growth of gallium arsenide. In: USSR Symposium on Generation of Microwave Oscillations Using the Gann Effect, Abstracts. Nauka, Novosibirsk, 75 (in Russian) (1973).
Pat. 3752714 (USA). Selective epitaxial deposition of semiconductor intermetallic compounds/K.Ito and S. lida, 148–175.4.08.69.
G. A. Aleksandrova, E. N. Korskaya, G. F. Lymar’ A. V. Marchukov, and A. E. Shubin. Growth of epitaxial indium arsenide layers in open chloride systems. In: Growth and Doping of Semiconductor Crystals and Films. Nauka, Novosibirsk, Part 1, 45–50 (in Russian) (1977).
O. Mizuno, H. Watanabe, and D. Shinoda. Vapor growth of InAs. Jap. J. Appl. Phys., 14,184–191 (1975).
Xenogenic and artificial liquid inclusions in synthetic quartz. Proc. VNIIP, 2 81–84 (in Russian) (1958).
V. T. Ushakovsky, K. F. Kashkurov, and A. V. Simonov. Growth filling of holes in artificial quartz crystals. Kristallografiya, 13, 559–560 (in Russian) (1968).
V. T. Ushakovsky. Selected aspects of quartz crystals growth. Zap. Vsesoyuz. Mineral. Obshchestva, Ser.2, Part 97, 571–581 (1968).
B. D. Joyce. Growth and perfection of chemically deposited epitaxial layers of Si and GaAs. J. Cryst. Growth, 3/4,43–59 (1968).
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1986 Consultants Bureau, New York
About this chapter
Cite this chapter
Pashchenko, P.B., Aleksandrova, G.A., Skvortsov, I.M. (1986). Local Epitaxy under Conditions of Strong Growth Rate Anisotropy. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7119-3_5
Download citation
DOI: https://doi.org/10.1007/978-1-4615-7119-3_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4615-7121-6
Online ISBN: 978-1-4615-7119-3
eBook Packages: Springer Book Archive