Abstract
The progress achieved in developing optoelectronic semiconductor devices employing heterojunctions has attracted much attention to the problem of fabrication of these epitaxial structures. The structural perfection of the heterostructures, and particularly the minimization of defects at the heterojunction, determine whether or not the heterostructures can be used in devices.
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Mil’vidsky, M.G., Dolginov, L.M. (1986). Formation of Defects in Epitaxial Heterostructures and Multicomponent Solid Solutions of Semiconductor Compounds. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7119-3_30
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DOI: https://doi.org/10.1007/978-1-4615-7119-3_30
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