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Numerical Analysis of Heat and Mass Transfer in the Growth of Large Single Crystals from the Melt

  • Chapter
Growth of Crystals

Abstract

Semiconductor single crystals, which nowadays are grown in ever increasing quantities to meet industrial demand, must be highly perfect structurally and contain minimum amounts of macroscopic and microscopic inhomogeneities. Analyses of structure and properties of semiconductor materials as functions of growth conditions have been carried out mainly by experimental methods. A new approach based on mathematical simulation is now becoming important. The present review will be devoted to this field.

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Author information

Authors and Affiliations

  1. The Latvian State University, Riga, Latvia

    N. A. Avdonin

  2. The Institute of Rare Metals, Moscow, Russia

    V. A. Smirnov

Authors
  1. N. A. Avdonin
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  2. V. A. Smirnov
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Editor information

Editors and Affiliations

  1. Institute of Crystallography, Academy of Sciences of the USSR, Moscow, Russia

    E. I. Givargizov

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© 1986 Consultants Bureau, New York

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Avdonin, N.A., Smirnov, V.A. (1986). Numerical Analysis of Heat and Mass Transfer in the Growth of Large Single Crystals from the Melt. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7119-3_22

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  • DOI: https://doi.org/10.1007/978-1-4615-7119-3_22

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4615-7121-6

  • Online ISBN: 978-1-4615-7119-3

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