Abstract
One of the recent achievements in crystal growth is the progress in direct pulling of shaped crystals (rods, ribbons, tubes, films, etc.) from the melt by various modifications of the Stepanov technique (Fig. 1). All of these modifications are based on creating a molten column outside of the crucible walls by using a novel element, namely, edge-definer (die shaper) which is absent in all other growth methods [1]. Stepanov’s techniques are used to grow crystals of semiconductors, dielectrics, and metals. The data for shaped single crystals successfully grown by various authors using these techniques (see Fig. 1) are given in Table 1 [2]. The table shows that a fairly wide range of materials with various thermal and capillary characteristics has been covered.
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© 1986 Consultants Bureau, New York
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Antonov, P.I. (1986). Shape and Properties of Crystals Grown from the Melt by the Stepanov Techniques. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7119-3_20
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DOI: https://doi.org/10.1007/978-1-4615-7119-3_20
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