A Unique High-Temperature, High-Pressure Crystal Growth System for Silicon Carbide

Abstract

The growth of single crystals at temperatures below 2000°C and normal pressures can be achieved with a wide variety of conventional apparatus [1]. As the necessity for growing crystals at temperatures above 2000°C increases, the number of crystal growth systems available is extremely limited. Temperature, however, is not the only requirement necessary for successful single crystal growth. Accurate temperature control, controllable vertical and horizontal temperature gradient, high purity, overpressure capability, and high-vacuum out-gassing are desirable. At temperatures above 2000°C these requirements become formidable tasks for equipment designers.