Abstract
We have grown whiskers of cubic silicon carbide by two methods. In the first, the initial mixture was composed of finely divided spectrally pure silicon and carbon in stoichiometric proportions. This mixture was placed in a porcelain, corundum, or graphite boat in a resistance furnace. The reactor was a porcelain or corundum tube of internal diameter 20–30 mm carrying a flow of hydrogen or argon.
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Literature Cited
S. A. Ammer, K. S. Kutakov, A. G. Moskalenko, V. S. Postnikov, and A. A. Shchetinin, Fiz. Khim. Ob. Mat., No. 3, 109 (1968).
V. S. Postnikov, S. A. Ammer, A. I. Drozhzhin, K. S. Kutakov, A. G. Moskalenko, and A. A. Shchetinin, Zav. Lab., 35: 732 (1969).
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Postnikov, V.S., Ammer, S.A., Kutakov, K.S., Petrov, V.N., Tatarenkov, A.F., Shchetinin, A.A. (1984). Growth of Silicon Carbide Whiskers. In: Chernov, A.A. (eds) Рост Кристаллоь / Rost Kristallov / Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7116-2_7
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DOI: https://doi.org/10.1007/978-1-4615-7116-2_7
Publisher Name: Springer, Boston, MA
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