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X-ray Diffraction Topography of Growth Defects in Crystals

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Рост Кристаллоь / Rost Kristallov / Growth of Crystals

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Abstract

The production of highly perfect crystals is of considerable scientific and technical importance, and there has been increasing interest in methods of examining crystal perfection. X-ray topographic methods provide abundant information on lattice defects of various scales. A major area of development in recent years has been the determination of crystal perfection by the direct observation of growth defects. X-ray topography here has considerable advantages over electron microscopy and optical methods. The sensitivity is high, while it is possible to examine the bulk distribution of various kinds of defects in comparatively large specimens. Here we consider methods that allow one to examine macroscopic defects (block structure) and microscopic ones (dislocations, inhomogeneous impurity distributions, inclusions, and so on), and results are given from these methods applied to crystals grown under various conditions.

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  1. Materials Research Institute, Moscow, Russia

    E. P. Kostyukova, V. G. Lyuttsau & Yu. M. Fishman

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  1. E. P. Kostyukova
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  2. V. G. Lyuttsau
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  1. Institute of Crystallography, Academy of Sciences of the USSR, Moscow, USSR

    A. A. Chernov

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Kostyukova, E.P., Lyuttsau, V.G., Fishman, Y.M. (1984). X-ray Diffraction Topography of Growth Defects in Crystals. In: Chernov, A.A. (eds) Рост Кристаллоь / Rost Kristallov / Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7116-2_42

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