Abstract
The rapid growth of device applications using the compound semiconductors, particularly, the arsenides and phosphides, has spurred the development of unique high-pressure methods for the growth of large single crystals of these volatile compounds. The production of single crystals using liquid-encapsulated Czochralski (LEC) crystal growth methods at furnace pressures up to 100 atm has matured to a point where it has now become a safe and acceptable production operation in the electronics industry in the United States and Japan. With the availability of reliable high-pressure furnace systems, the growth of a wide variety of single crystals from stoichiometric melts having volatile or pressure-sensitive components is becoming increasingly feasible and practical.
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© 1984 Consultants Bureau, New York
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Wenckus, J.F. (1984). Czochralski Growth of Single Crystals Using High-Pressure Techniques. In: Chernov, A.A. (eds) Рост Кристаллоь / Rost Kristallov / Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7116-2_35
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DOI: https://doi.org/10.1007/978-1-4615-7116-2_35
Publisher Name: Springer, Boston, MA
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