Abstract
Many researches are presently in progress on semiconductor compounds of A2B4C 52 type, which are very promising electronic materials [1]; however, little is known about the growth of films of these compounds, although epitaxial technology has long had an established place in the manufacture of semiconductor devices.
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Bertóti, I. (1984). Epitaxial Growth of ZnSnAs2 and ZnSnP2 Films. In: Chernov, A.A. (eds) Рост Кристаллоь / Rost Kristallov / Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7116-2_27
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DOI: https://doi.org/10.1007/978-1-4615-7116-2_27
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