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Degradation Mechanisms and Reliability Issues for Ferroelectric Thin Films

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Thin Film Ferroelectric Materials and Devices

Part of the book series: Electronic Materials: Science and Technology ((EMST,volume 3))

Abstract

Ferroelectric perovskite thin films are being developed for a wide range of applications, including nonvolatile memories, high-density DRAMs (≥ 1 Gbit), integrated decoupling capacitors, piezoelectric sensors and actuators, IR detector arrays, and optical switches and modulators. While the fundamental properties (ferroelectric, dielectric, piezoelectric, pyroelectric, and electrooptic) of these materials are well suited to these various applications, the lifetime and reliability of devices is ultimately limited by degradation and aging phenomena [1]. Consequently, there has been extensive research devoted to understanding the mechanisms responsible for the degradation and/or aging of perovskite films with time, temperature, and external field stress [2–19].

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Author information

Authors and Affiliations

  1. Sandia National Laboratories, Albuquerque, New Mexico, 87185, USA

    Duane Dimos, William L. Warren & Husam N. Al-Shareef

Authors
  1. Duane Dimos
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  2. William L. Warren
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  3. Husam N. Al-Shareef
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Editor information

Editors and Affiliations

  1. University of Maryland at College Park, USA

    R. Ramesh

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© 1997 Springer Science+Business Media New York

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Dimos, D., Warren, W.L., Al-Shareef, H.N. (1997). Degradation Mechanisms and Reliability Issues for Ferroelectric Thin Films. In: Ramesh, R. (eds) Thin Film Ferroelectric Materials and Devices. Electronic Materials: Science and Technology, vol 3. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-6185-9_8

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  • DOI: https://doi.org/10.1007/978-1-4615-6185-9_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-7923-9993-3

  • Online ISBN: 978-1-4615-6185-9

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